Abstract
A model is presented for control of the open circuit voltage, Voc, at some semiconductor/liquid interfaces, in particular, n-Si and p-Si, based upon control by bulk diffusion recombination, not surface states. In other systems, it would appear that surface limitations do exist and must be dealt with. In this the author amplifies on calculations which allow distinction between these effects, and describe experimental techniques which allow a kinetic description of the semiconductor/liquid interface to be developed, and which provide a protocol for evaluation of the semiconductor/liquid junction. A comparison of theoretical and experimental Voc values indicate that for n-Si/methanol and p-Si/acetonitrile junctions, the bulk recombination limit is closely approached. This agreement is sufficient to indicate that no serious interfacial potential drops due to surface states are present at these junctions.
| Original language | English |
|---|---|
| Title of host publication | Extended Abstracts, Meeting - International Society of Electrochemistry |
| Publisher | Int Soc of Electrochemistry |
| Pages | 139-141 |
| Number of pages | 3 |
| Publication status | Published - 1984 |
ASJC Scopus subject areas
- Engineering(all)