Photoexcited carrier dynamics of Cu2S thin films

Shannon C. Riha, Richard D. Schaller, David J. Gosztola, Gary P. Wiederrecht, Alex B.F. Martinson

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this Letter, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deduced from the spectral evolution from 300 fs to 300 μs. Revealing the effects of grain morphology on the photophysical properties of Cu2S is a crucial step toward reaching high efficiencies in operationally stable Cu2S thin film photovoltaics. (Figure Presented).

Original languageEnglish
Pages (from-to)4055-4061
Number of pages7
JournalJournal of Physical Chemistry Letters
Volume5
Issue number22
DOIs
Publication statusPublished - Nov 20 2014

Keywords

  • Atomic layer deposition
  • CuS thin films
  • Photophysical properties
  • Photovoltaics
  • Thin film solar cell
  • Transient absorption spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physical and Theoretical Chemistry

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    Riha, S. C., Schaller, R. D., Gosztola, D. J., Wiederrecht, G. P., & Martinson, A. B. F. (2014). Photoexcited carrier dynamics of Cu2S thin films. Journal of Physical Chemistry Letters, 5(22), 4055-4061. https://doi.org/10.1021/jz5021873