Photoexcited Carrier Dynamics of In2S3 Thin Films

Robert F. McCarthy, Richard D Schaller, David J. Gosztola, Gary P. Wiederrecht, Alex B F Martinson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (2S3-based absorbers is finally considered.

Original languageEnglish
Pages (from-to)2554-2561
Number of pages8
JournalJournal of Physical Chemistry Letters
Volume6
Issue number13
DOIs
Publication statusPublished - Jun 19 2015

Fingerprint

Conduction bands
absorbers
Photoluminescence
conduction bands
Indium sulfide
indium sulfides
photoluminescence
Thin films
Stimulated emission
Indium
Electronic density of states
Atomic layer deposition
Photoconductivity
thin films
atomic layer epitaxy
stimulated emission
Charge carriers
Absorption spectroscopy
electronics
Sulfur

Keywords

  • atomic layer deposition
  • indium(III) sulfide
  • photoluminescence
  • photophysical properties
  • photovoltaics
  • transient absorption spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

McCarthy, R. F., Schaller, R. D., Gosztola, D. J., Wiederrecht, G. P., & Martinson, A. B. F. (2015). Photoexcited Carrier Dynamics of In2S3 Thin Films. Journal of Physical Chemistry Letters, 6(13), 2554-2561. https://doi.org/10.1021/acs.jpclett.5b00935

Photoexcited Carrier Dynamics of In2S3 Thin Films. / McCarthy, Robert F.; Schaller, Richard D; Gosztola, David J.; Wiederrecht, Gary P.; Martinson, Alex B F.

In: Journal of Physical Chemistry Letters, Vol. 6, No. 13, 19.06.2015, p. 2554-2561.

Research output: Contribution to journalArticle

McCarthy, RF, Schaller, RD, Gosztola, DJ, Wiederrecht, GP & Martinson, ABF 2015, 'Photoexcited Carrier Dynamics of In2S3 Thin Films', Journal of Physical Chemistry Letters, vol. 6, no. 13, pp. 2554-2561. https://doi.org/10.1021/acs.jpclett.5b00935
McCarthy, Robert F. ; Schaller, Richard D ; Gosztola, David J. ; Wiederrecht, Gary P. ; Martinson, Alex B F. / Photoexcited Carrier Dynamics of In2S3 Thin Films. In: Journal of Physical Chemistry Letters. 2015 ; Vol. 6, No. 13. pp. 2554-2561.
@article{6f9e0d4e4fdf485aa0e03b95e8efb9bf,
title = "Photoexcited Carrier Dynamics of In2S3 Thin Films",
abstract = "Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (2S3-based absorbers is finally considered.",
keywords = "atomic layer deposition, indium(III) sulfide, photoluminescence, photophysical properties, photovoltaics, transient absorption spectroscopy",
author = "McCarthy, {Robert F.} and Schaller, {Richard D} and Gosztola, {David J.} and Wiederrecht, {Gary P.} and Martinson, {Alex B F}",
year = "2015",
month = "6",
day = "19",
doi = "10.1021/acs.jpclett.5b00935",
language = "English",
volume = "6",
pages = "2554--2561",
journal = "Journal of Physical Chemistry Letters",
issn = "1948-7185",
publisher = "American Chemical Society",
number = "13",

}

TY - JOUR

T1 - Photoexcited Carrier Dynamics of In2S3 Thin Films

AU - McCarthy, Robert F.

AU - Schaller, Richard D

AU - Gosztola, David J.

AU - Wiederrecht, Gary P.

AU - Martinson, Alex B F

PY - 2015/6/19

Y1 - 2015/6/19

N2 - Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (2S3-based absorbers is finally considered.

AB - Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (2S3-based absorbers is finally considered.

KW - atomic layer deposition

KW - indium(III) sulfide

KW - photoluminescence

KW - photophysical properties

KW - photovoltaics

KW - transient absorption spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84947586137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947586137&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.5b00935

DO - 10.1021/acs.jpclett.5b00935

M3 - Article

AN - SCOPUS:84947586137

VL - 6

SP - 2554

EP - 2561

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 13

ER -