Abstract
Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.
| Original language | English |
|---|---|
| Article number | 183501 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2007 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires. / Du Pasquier, Aurelien; Mastrogiovanni, Daniel D T; Klein, Lauren A.; Wang, Tong; Garfunkel, Eric.
In: Applied Physics Letters, Vol. 91, No. 18, 183501, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires
AU - Du Pasquier, Aurelien
AU - Mastrogiovanni, Daniel D T
AU - Klein, Lauren A.
AU - Wang, Tong
AU - Garfunkel, Eric
PY - 2007
Y1 - 2007
N2 - Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.
AB - Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.
UR - http://www.scopus.com/inward/record.url?scp=35648935010&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35648935010&partnerID=8YFLogxK
U2 - 10.1063/1.2801554
DO - 10.1063/1.2801554
M3 - Article
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 183501
ER -