Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires

Aurelien Du Pasquier; Daniel D.T. Mastrogiovanni; Lauren A. Klein; Tong Wang; Eric Garfunkel

doi:10.1063/1.2801554

Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires

Aurelien Du Pasquier, Daniel D.T. Mastrogiovanni, Lauren A. Klein, Tong Wang, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.

Original language	English
Article number	183501
Journal	Applied Physics Letters
Volume	91
Issue number	18
DOIs	https://doi.org/10.1063/1.2801554
Publication status	Published - Nov 7 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Du Pasquier, A., Mastrogiovanni, D. D. T., Klein, L. A., Wang, T., & Garfunkel, E. (2007). Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires. Applied Physics Letters, 91(18), [183501]. https://doi.org/10.1063/1.2801554

@article{93946018cef34d8383a64912e124b0e5,

title = "Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires",

abstract = "Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.",

author = "{Du Pasquier}, Aurelien and Mastrogiovanni, {Daniel D.T.} and Klein, {Lauren A.} and Tong Wang and Eric Garfunkel",

year = "2007",

month = nov,

day = "7",

doi = "10.1063/1.2801554",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Photoinduced charge transfer between poly(3-hexylthiophene) and germanium nanowires

AU - Du Pasquier, Aurelien

AU - Mastrogiovanni, Daniel D.T.

AU - Klein, Lauren A.

AU - Wang, Tong

AU - Garfunkel, Eric

PY - 2007/11/7

Y1 - 2007/11/7

N2 - Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.

AB - Germanium nanowires (GeNWs) were used to enhance the properties of organic photovoltaic devices. GeNWs were grown to a length of 1-5 μm on Si O2 by the vapor-liquid-solid method catalyzed by 20 nm Au seeds. Once grown, the GeNWs were dispersed in solution with poly(3-hexylthiophene) and spin cast into films. The photoluminescence and external quantum efficiency of the films indicated a significant increase in exciton dissociation and photocurrent generation. The results imply that the GeNWs may act as an electron acceptor for bulk heterojunction hybrid-inorganic/organic photovoltaic devices. The impacts of GeNW on device characteristics are discussed.

UR - http://www.scopus.com/inward/record.url?scp=35648935010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35648935010&partnerID=8YFLogxK

U2 - 10.1063/1.2801554

DO - 10.1063/1.2801554

M3 - Article

AN - SCOPUS:35648935010

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183501

ER -