Photoluminescence-based measurements of the energy gap and diffusion length of Zn3 P2

Gregory M. Kimball, Astrid M. Müller, Nathan S Lewis, Harry A. Atwater

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

The steady-state photoluminescence spectra of zinc phosphide (Zn 3 P2) wafers have revealed a fundamental indirect band gap at 1.38 eV, in close proximity to the direct band gap at 1.50 eV. These values are consistent with the values for the indirect and direct band gaps obtained from analysis of the complex dielectric function deduced from spectroscopic ellipsometric measurements. Bulk minority carrier lifetimes of 20 ns were observed by time-resolved photoluminescence decay measurements, implying minority-carrier diffusion lengths of 7 μm.

Original languageEnglish
Article number112103
JournalApplied Physics Letters
Volume95
Issue number11
DOIs
Publication statusPublished - 2009

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diffusion length
minority carriers
photoluminescence
phosphides
carrier lifetime
proximity
zinc
wafers
decay

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence-based measurements of the energy gap and diffusion length of Zn3 P2 . / Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S; Atwater, Harry A.

In: Applied Physics Letters, Vol. 95, No. 11, 112103, 2009.

Research output: Contribution to journalArticle

Kimball, Gregory M. ; Müller, Astrid M. ; Lewis, Nathan S ; Atwater, Harry A. / Photoluminescence-based measurements of the energy gap and diffusion length of Zn3 P2 . In: Applied Physics Letters. 2009 ; Vol. 95, No. 11.
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