Abstract
Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18.
Original language | English |
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Pages (from-to) | 129-131 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 15 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1969 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)