Photoluminescence of oxygen in ZnTe introduced by ion implantation

J. L. Merz; Leonard C Feldman

doi:10.1063/1.1652935

Photoluminescence of oxygen in ZnTe introduced by ion implantation

J. L. Merz, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Photoluminescence has been observed from oxygen (O¹⁶) ions implanted into ZnTe. Doses of 5 × 10¹³ oxygen ions/cm ² were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O ¹⁸.

Original language	English
Pages (from-to)	129-131
Number of pages	3
Journal	Applied Physics Letters
Volume	15
Issue number	5
DOIs	https://doi.org/10.1063/1.1652935
Publication status	Published - 1969

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Merz, J. L., & Feldman, L. C. (1969). Photoluminescence of oxygen in ZnTe introduced by ion implantation. Applied Physics Letters, 15(5), 129-131. https://doi.org/10.1063/1.1652935

@article{227378fbf7264a90bb3d068a469a9fa5,

title = "Photoluminescence of oxygen in ZnTe introduced by ion implantation",

abstract = "Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18.",

author = "Merz, {J. L.} and Feldman, {Leonard C}",

year = "1969",

doi = "10.1063/1.1652935",

language = "English",

volume = "15",

pages = "129--131",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Photoluminescence of oxygen in ZnTe introduced by ion implantation

AU - Merz, J. L.

AU - Feldman, Leonard C

PY - 1969

Y1 - 1969

N2 - Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18.

AB - Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18.

UR - http://www.scopus.com/inward/record.url?scp=0014566087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0014566087&partnerID=8YFLogxK

U2 - 10.1063/1.1652935

DO - 10.1063/1.1652935

M3 - Article

AN - SCOPUS:0014566087

VL - 15

SP - 129

EP - 131

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -