Photoluminescence of oxygen in ZnTe introduced by ion implantation

J. L. Merz, Leonard C Feldman

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Photoluminescence has been observed from oxygen (O16) ions implanted into ZnTe. Doses of 5 × 1013 oxygen ions/cm 2 were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300-400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon-implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O 18.

Original languageEnglish
Pages (from-to)129-131
Number of pages3
JournalApplied Physics Letters
Volume15
Issue number5
DOIs
Publication statusPublished - 1969

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ion implantation
oxygen ions
photoluminescence
oxygen
neon
isotope effect
zinc
traps
vapors
dosage
annealing
room temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence of oxygen in ZnTe introduced by ion implantation. / Merz, J. L.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 15, No. 5, 1969, p. 129-131.

Research output: Contribution to journalArticle

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