Photoluminescent properties of semiconducting Tl 6I 4Se

N. K. Cho, J. A. Peters, Z. Liu, B. W. Wessels, S. Johnsen, M. G. Kanatzidis, J. H. Song, H. Jin, A. Freeman

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9 Citations (Scopus)

Abstract

The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.

Original languageEnglish
Article number015016
JournalSemiconductor Science and Technology
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 1 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Cho, N. K., Peters, J. A., Liu, Z., Wessels, B. W., Johnsen, S., Kanatzidis, M. G., Song, J. H., Jin, H., & Freeman, A. (2012). Photoluminescent properties of semiconducting Tl 6I 4Se. Semiconductor Science and Technology, 27(1), [015016]. https://doi.org/10.1088/0268-1242/27/1/015016