Photon-assisted oxygen diffusion and oxygen-related traps in organic semiconductors

Hikmet Najafov, Daniel Mastrogiovanni, Eric Garfunkel, Leonard C Feldman, Vitaly Podzorov

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A highly sensitive trap characterization technique based on wavelength- and polarization-resolved photocurrent excitation spectroscopy of single crystalline organic semiconductors is described. The method reveals that even a brief illumination of organic molecular crystals in an oxygen atmosphere triggers a long-term oxygen diffusion in the dark that results in formation of traps at depth scales comparable to the light penetration length.

Original languageEnglish
Pages (from-to)981-985
Number of pages5
JournalAdvanced Materials
Volume23
Issue number8
DOIs
Publication statusPublished - Feb 22 2011

Fingerprint

Semiconducting organic compounds
Photons
Oxygen
Molecular crystals
Photocurrents
Lighting
Spectroscopy
Polarization
Crystalline materials
Wavelength

Keywords

  • charge transport
  • organic field-effect transistors
  • organic semiconductors
  • oxygen diffusion
  • photoconductivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Photon-assisted oxygen diffusion and oxygen-related traps in organic semiconductors. / Najafov, Hikmet; Mastrogiovanni, Daniel; Garfunkel, Eric; Feldman, Leonard C; Podzorov, Vitaly.

In: Advanced Materials, Vol. 23, No. 8, 22.02.2011, p. 981-985.

Research output: Contribution to journalArticle

Najafov, Hikmet ; Mastrogiovanni, Daniel ; Garfunkel, Eric ; Feldman, Leonard C ; Podzorov, Vitaly. / Photon-assisted oxygen diffusion and oxygen-related traps in organic semiconductors. In: Advanced Materials. 2011 ; Vol. 23, No. 8. pp. 981-985.
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