Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Heungman Park; Ying Xu; Kalman Varga; Jingbo Qi; Leonard C. Feldman; Gunter Lüpke; Norman Tolk

doi:10.1063/1.3518070

Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation

Heungman Park, Ying Xu, Kalman Varga, Jingbo Qi, Leonard C. Feldman, Gunter Lüpke, Norman Tolk

Rutgers University

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4 Citations (Scopus)

Abstract

We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO₂ near the SiO₂ interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO₂.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3518070
Publication status	Published - Nov 15 2010

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Park, H., Xu, Y., Varga, K., Qi, J., Feldman, L. C., Lüpke, G., & Tolk, N. (2010). Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation. Applied Physics Letters, 97(20), [202105]. https://doi.org/10.1063/1.3518070

@article{895c919156694bffa61ff91847a4d804,

title = "Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation",

abstract = "We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.",

author = "Heungman Park and Ying Xu and Kalman Varga and Jingbo Qi and Feldman, {Leonard C.} and Gunter L{\"u}pke and Norman Tolk",

year = "2010",

month = nov

day = "15",

doi = "10.1063/1.3518070",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

AU - Park, Heungman

AU - Xu, Ying

AU - Varga, Kalman

AU - Qi, Jingbo

AU - Feldman, Leonard C.

AU - Lüpke, Gunter

AU - Tolk, Norman

PY - 2010/11/15

Y1 - 2010/11/15

N2 - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

AB - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=78649242482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649242482&partnerID=8YFLogxK

U2 - 10.1063/1.3518070

DO - 10.1063/1.3518070

M3 - Article

AN - SCOPUS:78649242482

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202105

ER -

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10.1063/1.3518070