Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Heungman Park; Ying Xu; Kalman Varga; Jingbo Qi; Leonard C. Feldman; Gunter Lüpke; Norman Tolk

doi:10.1063/1.3518070

Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation

Heungman Park, Ying Xu, Kalman Varga, Jingbo Qi, Leonard C. Feldman, Gunter Lüpke, Norman Tolk

Rutgers University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO₂ near the SiO₂ interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO₂.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3518070
Publication status	Published - Nov 15 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3518070

Fingerprint Dive into the research topics of 'Photon energy threshold for filling boron induced charge traps in SiO <sub>2</sub> near the Si/SiO<sub>2</sub> interface using second harmonic generation'. Together they form a unique fingerprint.

Cite this

Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation. / Park, Heungman; Xu, Ying; Varga, Kalman; Qi, Jingbo; Feldman, Leonard C.; Lüpke, Gunter; Tolk, Norman.

In: Applied Physics Letters, Vol. 97, No. 20, 202105, 15.11.2010.

Research output: Contribution to journal › Article › peer-review

@article{895c919156694bffa61ff91847a4d804,

title = "Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation",

abstract = "We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.",

author = "Heungman Park and Ying Xu and Kalman Varga and Jingbo Qi and Feldman, {Leonard C.} and Gunter L{\"u}pke and Norman Tolk",

note = "Funding Information: This work was supported by Department of Energy (DOE), Basic Energy Sciences, Grant No. DE-FGO2-99ER45781.",

year = "2010",

month = nov,

day = "15",

doi = "10.1063/1.3518070",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

AU - Park, Heungman

AU - Xu, Ying

AU - Varga, Kalman

AU - Qi, Jingbo

AU - Feldman, Leonard C.

AU - Lüpke, Gunter

AU - Tolk, Norman

N1 - Funding Information: This work was supported by Department of Energy (DOE), Basic Energy Sciences, Grant No. DE-FGO2-99ER45781.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

AB - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=78649242482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649242482&partnerID=8YFLogxK

U2 - 10.1063/1.3518070

DO - 10.1063/1.3518070

M3 - Article

AN - SCOPUS:78649242482

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202105