Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Heungman Park, Ying Xu, Kalman Varga, Jingbo Qi, Leonard C Feldman, Gunter Lüpke, Norman Tolk

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

Original languageEnglish
Article number202105
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - Nov 15 2010

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harmonic generations
boron
traps
thresholds
photons
energy
photoelectric emission
energy levels
pumps
valence
color
probes
silicon
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation. / Park, Heungman; Xu, Ying; Varga, Kalman; Qi, Jingbo; Feldman, Leonard C; Lüpke, Gunter; Tolk, Norman.

In: Applied Physics Letters, Vol. 97, No. 20, 202105, 15.11.2010.

Research output: Contribution to journalArticle

Park, Heungman ; Xu, Ying ; Varga, Kalman ; Qi, Jingbo ; Feldman, Leonard C ; Lüpke, Gunter ; Tolk, Norman. / Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation. In: Applied Physics Letters. 2010 ; Vol. 97, No. 20.
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