Abstract
We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.
| Original language | English |
|---|---|
| Article number | 202105 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - Nov 15 2010 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation. / Park, Heungman; Xu, Ying; Varga, Kalman; Qi, Jingbo; Feldman, Leonard C; Lüpke, Gunter; Tolk, Norman.
In: Applied Physics Letters, Vol. 97, No. 20, 202105, 15.11.2010.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation
AU - Park, Heungman
AU - Xu, Ying
AU - Varga, Kalman
AU - Qi, Jingbo
AU - Feldman, Leonard C
AU - Lüpke, Gunter
AU - Tolk, Norman
PY - 2010/11/15
Y1 - 2010/11/15
N2 - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.
AB - We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.
UR - http://www.scopus.com/inward/record.url?scp=78649242482&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649242482&partnerID=8YFLogxK
U2 - 10.1063/1.3518070
DO - 10.1063/1.3518070
M3 - Article
AN - SCOPUS:78649242482
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
M1 - 202105
ER -