Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Heungman Park; Ying Xu; Kalman Varga; Jingbo Qi; Leonard C. Feldman; Gunter Lüpke; Norman Tolk

doi:10.1063/1.3518070

Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation

Heungman Park, Ying Xu, Kalman Varga, Jingbo Qi, Leonard C. Feldman, Gunter Lüpke, Norman Tolk

Rutgers University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO₂ near the SiO₂ interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO₂.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3518070
Publication status	Published - Nov 15 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3518070

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Photon energy threshold for filling boron induced charge traps in SiO ₂ near the Si/SiO₂ interface using second harmonic generation. / Park, Heungman; Xu, Ying; Varga, Kalman; Qi, Jingbo; Feldman, Leonard C.; Lüpke, Gunter; Tolk, Norman.

In: Applied Physics Letters, Vol. 97, No. 20, 202105, 15.11.2010.

Research output: Contribution to journal › Article › peer-review

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