Abstract
We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.
Original language | English |
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Article number | 202105 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 20 |
DOIs | |
Publication status | Published - Nov 15 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)