Photon energy threshold for filling boron induced charge traps in SiO 2 near the Si/SiO2 interface using second harmonic generation

Heungman Park, Ying Xu, Kalman Varga, Jingbo Qi, Leonard C. Feldman, Gunter Lüpke, Norman Tolk

Research output: Contribution to journalArticle

4 Citations (Scopus)


We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the SiO2 interface, using a two-color pump-probe approach involving internal photoemission and second harmonic generation. The threshold photon energy for filling the B+ induced charge trap is 2.61 eV (λ=475 nm) for single photon excitation between the silicon valence band and the B+ trap energy level in SiO2.

Original languageEnglish
Article number202105
JournalApplied Physics Letters
Issue number20
Publication statusPublished - Nov 15 2010


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this