Physical and electrical properties of chemical vapor grown GaN nano/microstructures

Jianye Li, Jie Liu, Lung Shen Wang, Robert P. H. Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.

Original languageEnglish
Pages (from-to)10325-10329
Number of pages5
JournalInorganic Chemistry
Volume47
Issue number22
DOIs
Publication statusPublished - Nov 17 2008

Fingerprint

Nanostructures
Electric properties
Physical properties
physical properties
Vapors
electrical properties
vapors
microstructure
Microstructure
gallium nitrides
Field effect transistors
Electron diffraction
X ray powder diffraction
leaves
Raman scattering
Chemical vapor deposition
x rays
field effect transistors
electron diffraction
vapor deposition

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry

Cite this

Physical and electrical properties of chemical vapor grown GaN nano/microstructures. / Li, Jianye; Liu, Jie; Wang, Lung Shen; Chang, Robert P. H.

In: Inorganic Chemistry, Vol. 47, No. 22, 17.11.2008, p. 10325-10329.

Research output: Contribution to journalArticle

Li, Jianye ; Liu, Jie ; Wang, Lung Shen ; Chang, Robert P. H. / Physical and electrical properties of chemical vapor grown GaN nano/microstructures. In: Inorganic Chemistry. 2008 ; Vol. 47, No. 22. pp. 10325-10329.
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