Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As

Robert P. H. Chang, C. C. Chang, J. J. Coleman, R. L. Kauffman, W. R. Wagner, Leonard C Feldman

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Abstract

Auger, Rutherford backscattering, and x-ray-diffraction measurements show that plasma-grown oxide films on Ga0.64Al0.36As are amorphous, uniform in composition with depth, and possess very sharp oxide-semiconductor interfaces. The electrical properties (I-V, C-V) of these films are such that they may be used for surface passivation of optoelectronic devices and as dielectric layers in electronic device fabrication.

Original languageEnglish
Pages (from-to)5384-5386
Number of pages3
JournalJournal of Applied Physics
Volume48
Issue number12
DOIs
Publication statusPublished - 1977

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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