Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As

Robert P. H. Chang, C. C. Chang, J. J. Coleman, R. L. Kauffman, W. R. Wagner, Leonard C Feldman

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Auger, Rutherford backscattering, and x-ray-diffraction measurements show that plasma-grown oxide films on Ga0.64Al0.36As are amorphous, uniform in composition with depth, and possess very sharp oxide-semiconductor interfaces. The electrical properties (I-V, C-V) of these films are such that they may be used for surface passivation of optoelectronic devices and as dielectric layers in electronic device fabrication.

Original languageEnglish
Pages (from-to)5384-5386
Number of pages3
JournalJournal of Applied Physics
Volume48
Issue number12
DOIs
Publication statusPublished - 1977

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optoelectronic devices
passivity
oxide films
backscattering
x ray diffraction
physical properties
electrical properties
fabrication
oxides
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As. / Chang, Robert P. H.; Chang, C. C.; Coleman, J. J.; Kauffman, R. L.; Wagner, W. R.; Feldman, Leonard C.

In: Journal of Applied Physics, Vol. 48, No. 12, 1977, p. 5384-5386.

Research output: Contribution to journalArticle

Chang, Robert P. H. ; Chang, C. C. ; Coleman, J. J. ; Kauffman, R. L. ; Wagner, W. R. ; Feldman, Leonard C. / Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As. In: Journal of Applied Physics. 1977 ; Vol. 48, No. 12. pp. 5384-5386.
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