Physical and optoelectronic properties of VxInySz intermediate band semiconductors deposited by atomic layer deposition

Robert F. McCarthy, Richard D Schaller, Alex B F Martinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this report, thin films of indium sulfide (In2S3) alloyed with vanadium have been deposited by atomic layer deposition. The physical and optoelectronic properties of these films have been studied to determine their potential for use in intermediate band solar cells. X-ray reflectivity measurements confirm control over stoichiometry by varying the ratio of In to V precursor pulses. As-deposited films on bare quartz and silicon substrates are amorphous and do not have absorption properties indicative of a mid-gap band. However, deposition of the VxInySz films on c-In2S3 appears to induce crystallization as seen by x-ray diffraction and scanning electron microscopy. A large, sub-band gap absorption peak is observed beginning near 1.0 eV, and increases with V concentration. Pronounced photoluminescence peaks occur at room temperature near 2.20 eV for both In2S3 and VxInySz films, while an additional 1.35 eV peak is observed for VxInySz. These results support the existence of a crystalline, thin-film, intermediate band semiconductor deposited by atomic layer deposition. Use of these heavily doped, thin film semiconductors could lead to cheap and simple fabrication of intermediate band solar cells.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
Publication statusPublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

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Keywords

  • atomic layer deposition
  • indium sulfide
  • intermediate band photovoltaics
  • photoluminescence
  • thin film semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

McCarthy, R. F., Schaller, R. D., & Martinson, A. B. F. (2015). Physical and optoelectronic properties of VxInySz intermediate band semiconductors deposited by atomic layer deposition. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355806] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355806