PLASMA ENHANCED BEAM DEPOSITION OF THIN FILMS AT LOW TEMPERATURES.

Robert P. H. Chang, S. Darack, E. Lane, C. C. Chang, D. Allara, E. Ong

Research output: Contribution to journalArticle

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Abstract

A plasma enhanced beam deposition technique for thin films is discussed. It is shown that thin films of tailored stoichiometry or amorphous layers can be easily deposited in the temperature range (30-250 degree C). The technique uses a combination of active atomic or molecular beams generated by charged particles or photons. Films of SiO//2, Al//2O//3, ZrO//3, silicon oxynitride, NbN, etc. , have been deposited on metals, semiconductors, and insulators. The interfaces between the deposited films and the substrates are extremely sharp, and no native growth of oxides of nitrides occurred on the substrate surfaces during film deposition. Film thickness and composition can be precisely controlled by optical monitoring techniques. For instance, the physical properties of the deposited SiO//2 at 100 degree C is nearly identical to that of thermal oxides grown on Si at 1100 degree C. The deposited SiO//2 has an electrostatic breakdown field strength of about 5 multiplied by 10**6V/cm, and 1 MHz C-V curves show a hysteresis of 50 mV at a sweep rate of 100 mV/s. The fixed charge density is 3. 5 multiplied by 10**1**1 cm** minus **2. The advantages of this process for depositing Al//2O//3 on InP, GaAs, and Si are discussed. Utilizing the low temperature nature of the technique, patterns of mu -width SiO//2 features have been made using photoresist masked substrates and the lift-off technique. Finally, it is proposed that epitaxial growth of compound films should also be possible under UHV conditions.

Original languageEnglish
Pages (from-to)935-942
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Oct 1983

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Plasmas
Thin films
Substrates
Atomic beams
Temperature
Oxides
Molecular beams
Photoresists
Charged particles
Charge density
Epitaxial growth
Nitrides
Stoichiometry
Film thickness
Hysteresis
Electrostatics
Photons
Physical properties
Semiconductor materials
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

PLASMA ENHANCED BEAM DEPOSITION OF THIN FILMS AT LOW TEMPERATURES. / Chang, Robert P. H.; Darack, S.; Lane, E.; Chang, C. C.; Allara, D.; Ong, E.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 10.1983, p. 935-942.

Research output: Contribution to journalArticle

@article{10318ec701c140a6aab7e6f707dfe710,
title = "PLASMA ENHANCED BEAM DEPOSITION OF THIN FILMS AT LOW TEMPERATURES.",
abstract = "A plasma enhanced beam deposition technique for thin films is discussed. It is shown that thin films of tailored stoichiometry or amorphous layers can be easily deposited in the temperature range (30-250 degree C). The technique uses a combination of active atomic or molecular beams generated by charged particles or photons. Films of SiO//2, Al//2O//3, ZrO//3, silicon oxynitride, NbN, etc. , have been deposited on metals, semiconductors, and insulators. The interfaces between the deposited films and the substrates are extremely sharp, and no native growth of oxides of nitrides occurred on the substrate surfaces during film deposition. Film thickness and composition can be precisely controlled by optical monitoring techniques. For instance, the physical properties of the deposited SiO//2 at 100 degree C is nearly identical to that of thermal oxides grown on Si at 1100 degree C. The deposited SiO//2 has an electrostatic breakdown field strength of about 5 multiplied by 10**6V/cm, and 1 MHz C-V curves show a hysteresis of 50 mV at a sweep rate of 100 mV/s. The fixed charge density is 3. 5 multiplied by 10**1**1 cm** minus **2. The advantages of this process for depositing Al//2O//3 on InP, GaAs, and Si are discussed. Utilizing the low temperature nature of the technique, patterns of mu -width SiO//2 features have been made using photoresist masked substrates and the lift-off technique. Finally, it is proposed that epitaxial growth of compound films should also be possible under UHV conditions.",
author = "Chang, {Robert P. H.} and S. Darack and E. Lane and Chang, {C. C.} and D. Allara and E. Ong",
year = "1983",
month = "10",
doi = "10.1116/1.582715",
language = "English",
volume = "1",
pages = "935--942",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - PLASMA ENHANCED BEAM DEPOSITION OF THIN FILMS AT LOW TEMPERATURES.

AU - Chang, Robert P. H.

AU - Darack, S.

AU - Lane, E.

AU - Chang, C. C.

AU - Allara, D.

AU - Ong, E.

PY - 1983/10

Y1 - 1983/10

N2 - A plasma enhanced beam deposition technique for thin films is discussed. It is shown that thin films of tailored stoichiometry or amorphous layers can be easily deposited in the temperature range (30-250 degree C). The technique uses a combination of active atomic or molecular beams generated by charged particles or photons. Films of SiO//2, Al//2O//3, ZrO//3, silicon oxynitride, NbN, etc. , have been deposited on metals, semiconductors, and insulators. The interfaces between the deposited films and the substrates are extremely sharp, and no native growth of oxides of nitrides occurred on the substrate surfaces during film deposition. Film thickness and composition can be precisely controlled by optical monitoring techniques. For instance, the physical properties of the deposited SiO//2 at 100 degree C is nearly identical to that of thermal oxides grown on Si at 1100 degree C. The deposited SiO//2 has an electrostatic breakdown field strength of about 5 multiplied by 10**6V/cm, and 1 MHz C-V curves show a hysteresis of 50 mV at a sweep rate of 100 mV/s. The fixed charge density is 3. 5 multiplied by 10**1**1 cm** minus **2. The advantages of this process for depositing Al//2O//3 on InP, GaAs, and Si are discussed. Utilizing the low temperature nature of the technique, patterns of mu -width SiO//2 features have been made using photoresist masked substrates and the lift-off technique. Finally, it is proposed that epitaxial growth of compound films should also be possible under UHV conditions.

AB - A plasma enhanced beam deposition technique for thin films is discussed. It is shown that thin films of tailored stoichiometry or amorphous layers can be easily deposited in the temperature range (30-250 degree C). The technique uses a combination of active atomic or molecular beams generated by charged particles or photons. Films of SiO//2, Al//2O//3, ZrO//3, silicon oxynitride, NbN, etc. , have been deposited on metals, semiconductors, and insulators. The interfaces between the deposited films and the substrates are extremely sharp, and no native growth of oxides of nitrides occurred on the substrate surfaces during film deposition. Film thickness and composition can be precisely controlled by optical monitoring techniques. For instance, the physical properties of the deposited SiO//2 at 100 degree C is nearly identical to that of thermal oxides grown on Si at 1100 degree C. The deposited SiO//2 has an electrostatic breakdown field strength of about 5 multiplied by 10**6V/cm, and 1 MHz C-V curves show a hysteresis of 50 mV at a sweep rate of 100 mV/s. The fixed charge density is 3. 5 multiplied by 10**1**1 cm** minus **2. The advantages of this process for depositing Al//2O//3 on InP, GaAs, and Si are discussed. Utilizing the low temperature nature of the technique, patterns of mu -width SiO//2 features have been made using photoresist masked substrates and the lift-off technique. Finally, it is proposed that epitaxial growth of compound films should also be possible under UHV conditions.

UR - http://www.scopus.com/inward/record.url?scp=0020831484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020831484&partnerID=8YFLogxK

U2 - 10.1116/1.582715

DO - 10.1116/1.582715

M3 - Article

AN - SCOPUS:0020831484

VL - 1

SP - 935

EP - 942

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -