PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

G. Smolinsky, Robert P. H. Chang, T. M. Mayer

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Abstract

A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalJournal of vacuum science & technology
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 1981

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ASJC Scopus subject areas

  • Engineering(all)

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