PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

G. Smolinsky, Robert P. H. Chang, T. M. Mayer

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalJournal of vacuum science & technology
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 1981

Fingerprint

Plasma etching
Hydrogen
Oxides
Fluorocarbons
Chlorine
Plasmas
Molecules
Carbon
Oxygen
III-V semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES. / Smolinsky, G.; Chang, Robert P. H.; Mayer, T. M.

In: Journal of vacuum science & technology, Vol. 18, No. 1, 01.1981, p. 12-16.

Research output: Contribution to journalArticle

@article{b40a150ef21e4e84894d4c18870466c1,
title = "PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.",
abstract = "A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.",
author = "G. Smolinsky and Chang, {Robert P. H.} and Mayer, {T. M.}",
year = "1981",
month = "1",
doi = "10.1116/1.570690",
language = "English",
volume = "18",
pages = "12--16",
journal = "Journal of Vacuum Science and Technology",
issn = "0022-5355",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

AU - Smolinsky, G.

AU - Chang, Robert P. H.

AU - Mayer, T. M.

PY - 1981/1

Y1 - 1981/1

N2 - A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

AB - A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

UR - http://www.scopus.com/inward/record.url?scp=0019397135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019397135&partnerID=8YFLogxK

U2 - 10.1116/1.570690

DO - 10.1116/1.570690

M3 - Article

VL - 18

SP - 12

EP - 16

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

SN - 0022-5355

IS - 1

ER -