PLASMA-GROWN OXIDE ON GaAs.

C. C. Chang, Robert P. H. Chang, S. P. Murarka

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Plasma oxidation of GaAs is a low temperature oxide growth technique with possible electronics device applications. Chemical depth profiles through 600-3000 Angstrom thick plasma-grown oxides were obtained using Auger spectroscopy combined with ion milling and were calibrated using neutron activation analysis. The ″bulk″ compositions of these oxides are uniform with depth and equivalent to those of mixtures of Ga//2O//3 and As//2O//3. Approximately the first 200A of the oxide surfaces are always As-rich, but each oxide as a whole was As deficient and the Ga/As concentration ratio increased with oxide thickness from 1. 1//8 at 600A to 1. 4//5 at 2780 angstrom. The mechanism of As loss is the faster out-diffusion of As compared to Ga during oxidation and volatilization of surface As-containing species.

Original languageEnglish
Pages (from-to)481-487
Number of pages7
JournalJournal of the Electrochemical Society
Volume125
Issue number3
Publication statusPublished - Mar 1978

Fingerprint

Oxides
oxides
Plasmas
Oxidation
oxidation
neutron activation analysis
vaporizing
Neutron activation analysis
Vaporization
Auger spectroscopy
gallium arsenide
Electronic equipment
Spectroscopy
Ions
profiles
Chemical analysis
electronics
ions
Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chang, C. C., Chang, R. P. H., & Murarka, S. P. (1978). PLASMA-GROWN OXIDE ON GaAs. Journal of the Electrochemical Society, 125(3), 481-487.

PLASMA-GROWN OXIDE ON GaAs. / Chang, C. C.; Chang, Robert P. H.; Murarka, S. P.

In: Journal of the Electrochemical Society, Vol. 125, No. 3, 03.1978, p. 481-487.

Research output: Contribution to journalArticle

Chang, CC, Chang, RPH & Murarka, SP 1978, 'PLASMA-GROWN OXIDE ON GaAs.', Journal of the Electrochemical Society, vol. 125, no. 3, pp. 481-487.
Chang, C. C. ; Chang, Robert P. H. ; Murarka, S. P. / PLASMA-GROWN OXIDE ON GaAs. In: Journal of the Electrochemical Society. 1978 ; Vol. 125, No. 3. pp. 481-487.
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