Plasma oxidation of GaAs is a low temperature oxide growth technique with possible electronics device applications. Chemical depth profiles through 600-3000 Angstrom thick plasma-grown oxides were obtained using Auger spectroscopy combined with ion milling and were calibrated using neutron activation analysis. The ″bulk″ compositions of these oxides are uniform with depth and equivalent to those of mixtures of Ga//2O//3 and As//2O//3. Approximately the first 200A of the oxide surfaces are always As-rich, but each oxide as a whole was As deficient and the Ga/As concentration ratio increased with oxide thickness from 1. 1//8 at 600A to 1. 4//5 at 2780 angstrom. The mechanism of As loss is the faster out-diffusion of As compared to Ga during oxidation and volatilization of surface As-containing species.
|Number of pages||7|
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - Mar 1978|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces