Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy

Robert P. H. Chang, C. C. Chang, T. T. Sheng

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Plasma oxidation of thin polycrystalline aluminum films (∼100 Å) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain-boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga-As- oxide layers on both sides of the Al-oxide film indicating that the oxidation of GaAs proceeds by an electric-field-assisted in-migration of oxygen through the Al-oxide layer toward the interface and the out-migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al-oxide on GaAs. By using the Al-oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga-As-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.

Original languageEnglish
Pages (from-to)657-659
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number12
DOIs
Publication statusPublished - 1977

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Auger spectroscopy
aluminum
transmission electron microscopy
oxidation
oxide films
oxides
unity
grain boundaries
filters
electric fields
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy. / Chang, Robert P. H.; Chang, C. C.; Sheng, T. T.

In: Applied Physics Letters, Vol. 30, No. 12, 1977, p. 657-659.

Research output: Contribution to journalArticle

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