Plasma oxidation of GaAs

Robert P. H. Chang, A. K. Sinha

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.

Original languageEnglish
Pages (from-to)56-58
Number of pages3
JournalApplied Physics Letters
Volume29
Issue number1
DOIs
Publication statusPublished - 1976

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arsenic
gallium
oxide films
electrical properties
oxidation
fabrication

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Plasma oxidation of GaAs. / Chang, Robert P. H.; Sinha, A. K.

In: Applied Physics Letters, Vol. 29, No. 1, 1976, p. 56-58.

Research output: Contribution to journalArticle

Chang, Robert P. H. ; Sinha, A. K. / Plasma oxidation of GaAs. In: Applied Physics Letters. 1976 ; Vol. 29, No. 1. pp. 56-58.
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