Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang, D. D. Edwards, D. R. Kammler, Thomas O Mason

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

Original languageEnglish
Pages (from-to)135-144
Number of pages10
JournalSolid State Ionics
Volume129
Issue number1
DOIs
Publication statusPublished - Apr 2000

Fingerprint

Point defects
Tin oxides
indium oxides
Indium
Oxides
point defects
tin oxides
Electric properties
electrical properties
conduction
oxides
Doping (additives)
Oxygen
Tin
Defect structures
Thermoelectric power
oxygen
Partial pressure
partial pressure
Cations

ASJC Scopus subject areas

  • Electrochemistry
  • Physical and Theoretical Chemistry
  • Energy Engineering and Power Technology
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Point defects and electrical properties of Sn-doped In-based transparent conducting oxides. / Hwang, J. H.; Edwards, D. D.; Kammler, D. R.; Mason, Thomas O.

In: Solid State Ionics, Vol. 129, No. 1, 04.2000, p. 135-144.

Research output: Contribution to journalArticle

Hwang, J. H. ; Edwards, D. D. ; Kammler, D. R. ; Mason, Thomas O. / Point defects and electrical properties of Sn-doped In-based transparent conducting oxides. In: Solid State Ionics. 2000 ; Vol. 129, No. 1. pp. 135-144.
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