Abstract
In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 135-144 |
| Number of pages | 10 |
| Journal | Solid State Ionics |
| Volume | 129 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Apr 2000 |
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ASJC Scopus subject areas
- Electrochemistry
- Physical and Theoretical Chemistry
- Energy Engineering and Power Technology
- Materials Chemistry
- Condensed Matter Physics
Cite this
Point defects and electrical properties of Sn-doped In-based transparent conducting oxides. / Hwang, J. H.; Edwards, D. D.; Kammler, D. R.; Mason, Thomas O.
In: Solid State Ionics, Vol. 129, No. 1, 04.2000, p. 135-144.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Point defects and electrical properties of Sn-doped In-based transparent conducting oxides
AU - Hwang, J. H.
AU - Edwards, D. D.
AU - Kammler, D. R.
AU - Mason, Thomas O
PY - 2000/4
Y1 - 2000/4
N2 - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.
AB - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0033885559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033885559&partnerID=8YFLogxK
U2 - 10.1016/S0167-2738(99)00321-5
DO - 10.1016/S0167-2738(99)00321-5
M3 - Article
AN - SCOPUS:0033885559
VL - 129
SP - 135
EP - 144
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
IS - 1
ER -