Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang; D. D. Edwards; D. R. Kammler; T. O. Mason

doi:10.1016/S0167-2738(99)00321-5

Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang, D. D. Edwards, D. R. Kammler, T. O. Mason

Northwestern University

Research output: Contribution to journal › Article

78 Citations (Scopus)

Abstract

In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated Sn_In donors, and neutral associates, believed to be (2Sn_InO″_i)^x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO₂ and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga_3-xIn_5+xSn₂O₁₆. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

Original language	English
Pages (from-to)	135-144
Number of pages	10
Journal	Solid State Ionics
Volume	129
Issue number	1
DOIs	https://doi.org/10.1016/S0167-2738(99)00321-5
Publication status	Published - Apr 2000

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/S0167-2738(99)00321-5

Fingerprint Dive into the research topics of 'Point defects and electrical properties of Sn-doped In-based transparent conducting oxides'. Together they form a unique fingerprint.

Cite this

Hwang, J. H., Edwards, D. D., Kammler, D. R., & Mason, T. O. (2000). Point defects and electrical properties of Sn-doped In-based transparent conducting oxides. Solid State Ionics, 129(1), 135-144. https://doi.org/10.1016/S0167-2738(99)00321-5

@article{9f366e0c27c6457a8b079b4aaba2eed3,

title = "Point defects and electrical properties of Sn-doped In-based transparent conducting oxides",

abstract = "In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.",

author = "Hwang, {J. H.} and Edwards, {D. D.} and Kammler, {D. R.} and Mason, {T. O.}",

year = "2000",

month = apr,

doi = "10.1016/S0167-2738(99)00321-5",

language = "English",

volume = "129",

pages = "135--144",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

AU - Hwang, J. H.

AU - Edwards, D. D.

AU - Kammler, D. R.

AU - Mason, T. O.

PY - 2000/4

Y1 - 2000/4

N2 - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

AB - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033885559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033885559&partnerID=8YFLogxK

U2 - 10.1016/S0167-2738(99)00321-5

DO - 10.1016/S0167-2738(99)00321-5

M3 - Article

AN - SCOPUS:0033885559

VL - 129

SP - 135

EP - 144

JO - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

IS - 1

ER -