Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang; D. D. Edwards; D. R. Kammler; Thomas O Mason

doi:10.1016/S0167-2738(99)00321-5

Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang, D. D. Edwards, D. R. Kammler, Thomas O Mason

Northwestern University

Research output: Contribution to journal › Article

76 Citations (Scopus)

Abstract

In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated Sn_In donors, and neutral associates, believed to be (2Sn_InO″_i)^x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO₂ and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga_3-xIn_5+xSn₂O₁₆. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

Original language	English
Pages (from-to)	135-144
Number of pages	10
Journal	Solid State Ionics
Volume	129
Issue number	1
DOIs	https://doi.org/10.1016/S0167-2738(99)00321-5
Publication status	Published - Apr 2000

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ASJC Scopus subject areas

Electrochemistry
Physical and Theoretical Chemistry
Energy Engineering and Power Technology
Materials Chemistry
Condensed Matter Physics

Cite this

Hwang, J. H., Edwards, D. D., Kammler, D. R., & Mason, T. O. (2000). Point defects and electrical properties of Sn-doped In-based transparent conducting oxides. Solid State Ionics, 129(1), 135-144. https://doi.org/10.1016/S0167-2738(99)00321-5

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10.1016/S0167-2738(99)00321-5