Point defects and related properties of highly co-doped bixbyite In2O3

Thomas O Mason, G. B. González, J. H. Hwang, D. R. Kammler

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The method of co-doping has been employed to achieve and study the influence of high defect populations in bixbyite In2O3. Substantial metastable Sn-doping levels can be achieved in nanocrystalline In2O3 with associated co-doping by oxygen interstitials. The resulting electrical properties, diffraction data (X-ray and neutron), and EXAFS studies support the presence of 2: 1 Sn-oxygen interstitial point defect clusters. Upon reduction, some of these clusters can be reduced to liberate donors and generate charge carriers. Extensive Cd/Sn co-substitution for indium in In2O3 has been achieved in equilibrium solid solutions. This self-compensated (isovalent) and relatively size-matched substitution reveals a tendency for off-stoichiometry in favor of donors, resulting in "self-doped" behavior irrespective of oxygen partial pressure. Ramifications of bixbyite defect structure for transparent electrode applications are discussed.

Original languageEnglish
Pages (from-to)2183-2189
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume5
Issue number11
DOIs
Publication statusPublished - Jun 1 2003

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Point defects
point defects
Doping (additives)
Oxygen
interstitials
oxygen
Substitution reactions
substitutes
Indium
Defect structures
defects
Charge carriers
Stoichiometry
Partial pressure
partial pressure
indium
charge carriers
stoichiometry
Solid solutions
Neutrons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Point defects and related properties of highly co-doped bixbyite In2O3 . / Mason, Thomas O; González, G. B.; Hwang, J. H.; Kammler, D. R.

In: Physical Chemistry Chemical Physics, Vol. 5, No. 11, 01.06.2003, p. 2183-2189.

Research output: Contribution to journalArticle

Mason, Thomas O ; González, G. B. ; Hwang, J. H. ; Kammler, D. R. / Point defects and related properties of highly co-doped bixbyite In2O3 In: Physical Chemistry Chemical Physics. 2003 ; Vol. 5, No. 11. pp. 2183-2189.
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