Point defects in Si thin films grown by molecular beam epitaxy

H. J. Gossmann, P. Asoka-Kumar, T. C. Leung, B. Nielsen, K. G. Lynn, F. C. Unterwald, Leonard C Feldman

Research output: Contribution to journalArticle

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Abstract

Depth profiles of vacancylike defects have been determined by positron annihilation spectroscopy in 200-nm-thick Si films grown by molecular beam epitaxy on Si(100) substrates at growth temperatures Tgrowth=200- 560°C. The line shape of the radiation emitted from implanted positrons annihilating in the near-surface region of a solid gives quantitative, depth-resolved information on defect concentrations in a nondestructive way. In particular, the method is sensitive to vacancylike defects in a concentration range inaccessible to electron microscopy or ion scattering, but important for electrical device characteristics. The sensitivity limit for these defects in the present experiments is estimated as 5×1015 cm-3. Films grown at Tgrowth≥475±20°C are indistinguishable from virgin wafers. So are samples with Tgrowth=220±20°C, subjected to a 2 min, TRTA≳500°C rapid thermal anneal (RTA) after every ≊30 nm of Si growth. If TRTA=450±20°C, part of the film contains a concentration of vacancylike defects on the order of 1018 cm-3. Our results indicate the importance of the growth parameters, such as temperature and substrate preparation, for the production of high quality films.

Original languageEnglish
Pages (from-to)540-542
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number5
DOIs
Publication statusPublished - 1992

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point defects
molecular beam epitaxy
defects
thin films
ion scattering
positron annihilation
thick films
line shape
positrons
electron microscopy
wafers
preparation
temperature
sensitivity
radiation
profiles
scattering
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gossmann, H. J., Asoka-Kumar, P., Leung, T. C., Nielsen, B., Lynn, K. G., Unterwald, F. C., & Feldman, L. C. (1992). Point defects in Si thin films grown by molecular beam epitaxy. Applied Physics Letters, 61(5), 540-542. https://doi.org/10.1063/1.107881

Point defects in Si thin films grown by molecular beam epitaxy. / Gossmann, H. J.; Asoka-Kumar, P.; Leung, T. C.; Nielsen, B.; Lynn, K. G.; Unterwald, F. C.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 61, No. 5, 1992, p. 540-542.

Research output: Contribution to journalArticle

Gossmann, HJ, Asoka-Kumar, P, Leung, TC, Nielsen, B, Lynn, KG, Unterwald, FC & Feldman, LC 1992, 'Point defects in Si thin films grown by molecular beam epitaxy', Applied Physics Letters, vol. 61, no. 5, pp. 540-542. https://doi.org/10.1063/1.107881
Gossmann HJ, Asoka-Kumar P, Leung TC, Nielsen B, Lynn KG, Unterwald FC et al. Point defects in Si thin films grown by molecular beam epitaxy. Applied Physics Letters. 1992;61(5):540-542. https://doi.org/10.1063/1.107881
Gossmann, H. J. ; Asoka-Kumar, P. ; Leung, T. C. ; Nielsen, B. ; Lynn, K. G. ; Unterwald, F. C. ; Feldman, Leonard C. / Point defects in Si thin films grown by molecular beam epitaxy. In: Applied Physics Letters. 1992 ; Vol. 61, No. 5. pp. 540-542.
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