Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors

Yao Chen, Wei Huang, Vinod K. Sangwan, Binghao Wang, Li Zeng, Gang Wang, Yan Huang, Zhiyun Lu, Michael J. Bedzyk, Mark C Hersam, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI)-doped In2O3 (In2O3:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2O3 and PEI-In2O3 via work function tuning of the In2O3:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2O3) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm2 V−1 s−1 on a 300 nm SiO2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In2O3 materials, which achieve a maximum mobility of ≈4 cm2 V−1 s−1. Furthermore, a mobility as high as 30 cm2 V−1 s−1 is achieved on a high-k ZrO2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.

Original languageEnglish
Article number1805082
JournalAdvanced Materials
DOIs
Publication statusAccepted/In press - Jan 1 2018

Fingerprint

Polyethyleneimine
Two dimensional electron gas
Thin film transistors
Oxide films
Polymers
Doping (additives)
Oxides
Electron mobility
Gate dielectrics
Metals
Indium
Demonstrations
Tuning

Keywords

  • 2D electron gases
  • homojunctions
  • oxide electronics
  • PEI-doped InO

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, Y., Huang, W., Sangwan, V. K., Wang, B., Zeng, L., Wang, G., ... Facchetti, A. (Accepted/In press). Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors. Advanced Materials, [1805082]. https://doi.org/10.1002/adma.201805082

Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors. / Chen, Yao; Huang, Wei; Sangwan, Vinod K.; Wang, Binghao; Zeng, Li; Wang, Gang; Huang, Yan; Lu, Zhiyun; Bedzyk, Michael J.; Hersam, Mark C; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Materials, 01.01.2018.

Research output: Contribution to journalArticle

Chen, Yao ; Huang, Wei ; Sangwan, Vinod K. ; Wang, Binghao ; Zeng, Li ; Wang, Gang ; Huang, Yan ; Lu, Zhiyun ; Bedzyk, Michael J. ; Hersam, Mark C ; Marks, Tobin J ; Facchetti, Antonio. / Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors. In: Advanced Materials. 2018.
@article{afce0cffdf914eb8b5c92cb4a5a44e52,
title = "Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors",
abstract = "High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI)-doped In2O3 (In2O3:x{\%} PEI, x = 0.5–4.0 wt{\%}) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2O3 and PEI-In2O3 via work function tuning of the In2O3:x{\%} PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2O3) to 4.0 wt{\%}, respectively. The resulting devices achieve electron mobilities greater than 10 cm2 V−1 s−1 on a 300 nm SiO2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In2O3 materials, which achieve a maximum mobility of ≈4 cm2 V−1 s−1. Furthermore, a mobility as high as 30 cm2 V−1 s−1 is achieved on a high-k ZrO2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.",
keywords = "2D electron gases, homojunctions, oxide electronics, PEI-doped InO",
author = "Yao Chen and Wei Huang and Sangwan, {Vinod K.} and Binghao Wang and Li Zeng and Gang Wang and Yan Huang and Zhiyun Lu and Bedzyk, {Michael J.} and Hersam, {Mark C} and Marks, {Tobin J} and Antonio Facchetti",
year = "2018",
month = "1",
day = "1",
doi = "10.1002/adma.201805082",
language = "English",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors

AU - Chen, Yao

AU - Huang, Wei

AU - Sangwan, Vinod K.

AU - Wang, Binghao

AU - Zeng, Li

AU - Wang, Gang

AU - Huang, Yan

AU - Lu, Zhiyun

AU - Bedzyk, Michael J.

AU - Hersam, Mark C

AU - Marks, Tobin J

AU - Facchetti, Antonio

PY - 2018/1/1

Y1 - 2018/1/1

N2 - High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI)-doped In2O3 (In2O3:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2O3 and PEI-In2O3 via work function tuning of the In2O3:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2O3) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm2 V−1 s−1 on a 300 nm SiO2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In2O3 materials, which achieve a maximum mobility of ≈4 cm2 V−1 s−1. Furthermore, a mobility as high as 30 cm2 V−1 s−1 is achieved on a high-k ZrO2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.

AB - High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI)-doped In2O3 (In2O3:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2O3 and PEI-In2O3 via work function tuning of the In2O3:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2O3) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm2 V−1 s−1 on a 300 nm SiO2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In2O3 materials, which achieve a maximum mobility of ≈4 cm2 V−1 s−1. Furthermore, a mobility as high as 30 cm2 V−1 s−1 is achieved on a high-k ZrO2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.

KW - 2D electron gases

KW - homojunctions

KW - oxide electronics

KW - PEI-doped InO

UR - http://www.scopus.com/inward/record.url?scp=85057801367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057801367&partnerID=8YFLogxK

U2 - 10.1002/adma.201805082

DO - 10.1002/adma.201805082

M3 - Article

C2 - 30499146

AN - SCOPUS:85057801367

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

M1 - 1805082

ER -