Polymeric memory elements and logic circuits that store multiple bit states

Graham De Ruiter, Yair H. Wijsboom, Noa Oded, Milko van der Boom

Research output: Contribution to journal › Article

31 Citations (Scopus)

Abstract

The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.

Original languageEnglish
Pages (from-to)3578-3585
Number of pages8
JournalACS Applied Materials and Interfaces
Volume2
Issue number12
DOIs
Publication statusPublished - Dec 22 2010

Fingerprint

Logic circuits
Data storage equipment
Polymers
Flaps
Flip flop circuits
Tin oxides
Indium
Glass
poly(3,4-ethylene dioxythiophene)

Keywords

  • functional integration
  • molecular memory
  • reconfigurable
  • sequential logic
  • thin films

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Polymeric memory elements and logic circuits that store multiple bit states. / De Ruiter, Graham; Wijsboom, Yair H.; Oded, Noa; van der Boom, Milko.

In: ACS Applied Materials and Interfaces, Vol. 2, No. 12, 22.12.2010, p. 3578-3585.

Research output: Contribution to journal › Article

De Ruiter, G, Wijsboom, YH, Oded, N & van der Boom, M 2010, 'Polymeric memory elements and logic circuits that store multiple bit states', ACS Applied Materials and Interfaces, vol. 2, no. 12, pp. 3578-3585. https://doi.org/10.1021/am1007497
De Ruiter G, Wijsboom YH, Oded N, van der Boom M. Polymeric memory elements and logic circuits that store multiple bit states. ACS Applied Materials and Interfaces. 2010 Dec 22;2(12):3578-3585. https://doi.org/10.1021/am1007497
De Ruiter, Graham ; Wijsboom, Yair H. ; Oded, Noa ; van der Boom, Milko. / Polymeric memory elements and logic circuits that store multiple bit states. In: ACS Applied Materials and Interfaces. 2010 ; Vol. 2, No. 12. pp. 3578-3585.
@article{e2aa7a7e40fd49e7a960781a28de53b6,
title = "Polymeric memory elements and logic circuits that store multiple bit states",
abstract = "The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.",
keywords = "functional integration, molecular memory, reconfigurable, sequential logic, thin films",
author = "{De Ruiter}, Graham and Wijsboom, {Yair H.} and Noa Oded and {van der Boom}, Milko",
year = "2010",
month = "12",
day = "22",
doi = "10.1021/am1007497",
language = "English",
volume = "2",
pages = "3578--3585",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Polymeric memory elements and logic circuits that store multiple bit states

AU - De Ruiter, Graham

AU - Wijsboom, Yair H.

AU - Oded, Noa

AU - van der Boom, Milko

PY - 2010/12/22

Y1 - 2010/12/22

N2 - The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.

AB - The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.

KW - functional integration

KW - molecular memory

KW - reconfigurable

KW - sequential logic

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=79151479414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79151479414&partnerID=8YFLogxK

U2 - 10.1021/am1007497

DO - 10.1021/am1007497

M3 - Article

VL - 2

SP - 3578

EP - 3585

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 12

ER -

Access to Document