Abstract
The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 3578-3585 |
| Number of pages | 8 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 2 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 22 2010 |
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Keywords
- functional integration
- molecular memory
- reconfigurable
- sequential logic
- thin films
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Polymeric memory elements and logic circuits that store multiple bit states. / De Ruiter, Graham; Wijsboom, Yair H.; Oded, Noa; van der Boom, Milko.
In: ACS Applied Materials and Interfaces, Vol. 2, No. 12, 22.12.2010, p. 3578-3585.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polymeric memory elements and logic circuits that store multiple bit states
AU - De Ruiter, Graham
AU - Wijsboom, Yair H.
AU - Oded, Noa
AU - van der Boom, Milko
PY - 2010/12/22
Y1 - 2010/12/22
N2 - The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.
AB - The ever-increasing flow of information requires new approaches for high-density data storage (HDDS). Here, we present a novel solution that incorporates the easily accessible polymer poly(3,4-ethylenedioxythiophene) (PEDOT) with multistate memory. The electrical addressable polymer is able to store up to five different memory states, which are stable up to 20 min. The observed memory states are generated by the optical output signature of the PEDOT deposited on indium tin oxide (ITO) coated glass, upon applying specific electrical inputs. Moreover, the demonstrated platforms can be represented by a general logic circuit, which allows the construction of multistate memory, such as flip-flops and flip-flap-flop logic circuits.
KW - functional integration
KW - molecular memory
KW - reconfigurable
KW - sequential logic
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=79151479414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79151479414&partnerID=8YFLogxK
U2 - 10.1021/am1007497
DO - 10.1021/am1007497
M3 - Article
C2 - 21114253
AN - SCOPUS:79151479414
VL - 2
SP - 3578
EP - 3585
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 12
ER -