Preparation of exfoliated Bi 2Te 3 thin films

Jiajun Luo, Dattatray Late, Isaac Wu, Kanishka Biswas, Mercouri Kanatzidis, Matthew Grayson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Bi 2Te 3, recently recognized as a "topological insulator", is proposed to have enhanced electrical and thermoelectric properties due to the topological surface state. In this work, we describe our technique for synthesizing Bi 2Te 3 thin films with the Scotch tape method. We also describe strategies for fabricating samples for transport and thermoelectric measurements. Preliminary data of carrier density and mobility at room temperature was obtained.

Original languageEnglish
Title of host publication15th International Conference on Narrow Gap Systems, NGS15
Pages135-138
Number of pages4
DOIs
Publication statusPublished - Dec 1 2011
Event15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States
Duration: Aug 1 2011Aug 5 2011

Publication series

NameAIP Conference Proceedings
Volume1416
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other15th International Conference on Narrow Gap Systems, NGS15
CountryUnited States
CityBlacksburg, VA
Period8/1/118/5/11

Keywords

  • Electron-beam fabrication
  • Thin film exfoliation
  • Topological Insulator

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Luo, J., Late, D., Wu, I., Biswas, K., Kanatzidis, M., & Grayson, M. (2011). Preparation of exfoliated Bi 2Te 3 thin films. In 15th International Conference on Narrow Gap Systems, NGS15 (pp. 135-138). (AIP Conference Proceedings; Vol. 1416). https://doi.org/10.1063/1.3671716