Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface

J. M. Gibson, H. J. Gossmann, J. C. Bean, R. T. Tung, Leonard C Feldman

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Abstract

The interface between a silicon (111) surface and an amorphous silicon layer deposited at room temperature is shown to retain the (7×7) periodicity of the substrate surface. Transmission electron microscopy shows the reconstructed, buried interface both by diffraction and by imaging at high resolution in plan-view and cross-section geometries. The interface reconstruction appears to differ from the surface Si reconstruction mainly by the absence of an ordered array of adatoms. If the amorphous-crystalline interface is moved nominally 15 A? by solid-phase regrowth, the 7×7 periodicity is removed. The resultant amorphous-crystal interface is exceptionally flat and shows a 1×1 diffraction pattern. The (100) 2×1 reconstruction is not preserved after amorphous Si deposition.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalPhysical Review Letters
Volume56
Issue number4
DOIs
Publication statusPublished - 1986

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periodic variations
adatoms
amorphous silicon
solid phases
diffraction patterns
transmission electron microscopy
high resolution
cross sections
silicon
room temperature
geometry
diffraction
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface. / Gibson, J. M.; Gossmann, H. J.; Bean, J. C.; Tung, R. T.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 56, No. 4, 1986, p. 355-358.

Research output: Contribution to journalArticle

Gibson, J. M. ; Gossmann, H. J. ; Bean, J. C. ; Tung, R. T. ; Feldman, Leonard C. / Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface. In: Physical Review Letters. 1986 ; Vol. 56, No. 4. pp. 355-358.
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