Abstract
The interface between a silicon (111) surface and an amorphous silicon layer deposited at room temperature is shown to retain the (7×7) periodicity of the substrate surface. Transmission electron microscopy shows the reconstructed, buried interface both by diffraction and by imaging at high resolution in plan-view and cross-section geometries. The interface reconstruction appears to differ from the surface Si reconstruction mainly by the absence of an ordered array of adatoms. If the amorphous-crystalline interface is moved nominally 15 A? by solid-phase regrowth, the 7×7 periodicity is removed. The resultant amorphous-crystal interface is exceptionally flat and shows a 1×1 diffraction pattern. The (100) 2×1 reconstruction is not preserved after amorphous Si deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 355-358 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 56 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1986 |
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Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface. / Gibson, J. M.; Gossmann, H. J.; Bean, J. C.; Tung, R. T.; Feldman, Leonard C.
In: Physical Review Letters, Vol. 56, No. 4, 1986, p. 355-358.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface
AU - Gibson, J. M.
AU - Gossmann, H. J.
AU - Bean, J. C.
AU - Tung, R. T.
AU - Feldman, Leonard C
PY - 1986
Y1 - 1986
N2 - The interface between a silicon (111) surface and an amorphous silicon layer deposited at room temperature is shown to retain the (7×7) periodicity of the substrate surface. Transmission electron microscopy shows the reconstructed, buried interface both by diffraction and by imaging at high resolution in plan-view and cross-section geometries. The interface reconstruction appears to differ from the surface Si reconstruction mainly by the absence of an ordered array of adatoms. If the amorphous-crystalline interface is moved nominally 15 A? by solid-phase regrowth, the 7×7 periodicity is removed. The resultant amorphous-crystal interface is exceptionally flat and shows a 1×1 diffraction pattern. The (100) 2×1 reconstruction is not preserved after amorphous Si deposition.
AB - The interface between a silicon (111) surface and an amorphous silicon layer deposited at room temperature is shown to retain the (7×7) periodicity of the substrate surface. Transmission electron microscopy shows the reconstructed, buried interface both by diffraction and by imaging at high resolution in plan-view and cross-section geometries. The interface reconstruction appears to differ from the surface Si reconstruction mainly by the absence of an ordered array of adatoms. If the amorphous-crystalline interface is moved nominally 15 A? by solid-phase regrowth, the 7×7 periodicity is removed. The resultant amorphous-crystal interface is exceptionally flat and shows a 1×1 diffraction pattern. The (100) 2×1 reconstruction is not preserved after amorphous Si deposition.
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U2 - 10.1103/PhysRevLett.56.355
DO - 10.1103/PhysRevLett.56.355
M3 - Article
VL - 56
SP - 355
EP - 358
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 4
ER -