Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4

J. I. McOmber; D. F. Shriver; Mark A Ratner; J. R. Ferraro; P. LaBonville Walling

doi:10.1016/0022-3697(82)90040-3

Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu₂HgI₄, Ag₂HgI₄ and Tl₂ZnI₄

J. I. McOmber, D. F. Shriver, Mark A Ratner, J. R. Ferraro, P. LaBonville Walling

Northwestern University

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

High pressure Raman, electrical conductivity, and optical microscopic studies on the ternary fast ion conductor Cu₂HgI₄ were undertaken to delineate the pressure-temperature phase diagram. In addition, comparison of the pressure dependence of Raman shifts in Cu₂HgI₄ and Tl₂ZnI₄ was used to assist in making vibrational assignments whenever possible.

Original language	English
Pages (from-to)	903-909
Number of pages	7
Journal	Journal of Physics and Chemistry of Solids
Volume	43
Issue number	9
DOIs	https://doi.org/10.1016/0022-3697(82)90040-3
Publication status	Published - 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/0022-3697(82)90040-3

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McOmber, J. I., Shriver, D. F., Ratner, M. A., Ferraro, J. R., & Walling, P. L. (1982). Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu₂HgI₄, Ag₂HgI₄ and Tl₂ZnI₄. Journal of Physics and Chemistry of Solids, 43(9), 903-909. https://doi.org/10.1016/0022-3697(82)90040-3

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