Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4

J. I. McOmber, D. F. Shriver, Mark A Ratner, J. R. Ferraro, P. LaBonville Walling

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High pressure Raman, electrical conductivity, and optical microscopic studies on the ternary fast ion conductor Cu2HgI4 were undertaken to delineate the pressure-temperature phase diagram. In addition, comparison of the pressure dependence of Raman shifts in Cu2HgI4 and Tl2ZnI4 was used to assist in making vibrational assignments whenever possible.

Original languageEnglish
Pages (from-to)903-909
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Issue number9
Publication statusPublished - 1982


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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