Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4

J. I. McOmber, D. F. Shriver, Mark A Ratner, J. R. Ferraro, P. LaBonville Walling

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

High pressure Raman, electrical conductivity, and optical microscopic studies on the ternary fast ion conductor Cu2HgI4 were undertaken to delineate the pressure-temperature phase diagram. In addition, comparison of the pressure dependence of Raman shifts in Cu2HgI4 and Tl2ZnI4 was used to assist in making vibrational assignments whenever possible.

Original languageEnglish
Pages (from-to)903-909
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume43
Issue number9
DOIs
Publication statusPublished - 1982

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pressure dependence
conductors
phase diagrams
Ions
conductivity
electrical resistivity
shift
ions
Phase diagrams
temperature
Temperature
Electric Conductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4. / McOmber, J. I.; Shriver, D. F.; Ratner, Mark A; Ferraro, J. R.; Walling, P. LaBonville.

In: Journal of Physics and Chemistry of Solids, Vol. 43, No. 9, 1982, p. 903-909.

Research output: Contribution to journalArticle

McOmber, J. I. ; Shriver, D. F. ; Ratner, Mark A ; Ferraro, J. R. ; Walling, P. LaBonville. / Pressure dependent Raman, and conductivity studies of the fast ion conductors Cu2HgI4, Ag2HgI4 and Tl2ZnI4. In: Journal of Physics and Chemistry of Solids. 1982 ; Vol. 43, No. 9. pp. 903-909.
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