Abstract
We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to ∼500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X3Si-R-SiX3 (R = -C 6H12- and X = Cl, OAc, NMe2, OMe, or R = -C2H4-O-C2H4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X3Si-R-SiX3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures (∼110°C) and adhere tenaciously to a variety of FET gate contact materials such as n +-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10-7 ∼ 10-8 A cm-2 at 2.0 MV/cm) and tunable capacitance values (from 5 to ∼350 nF cm-2). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 6867-6878 |
| Number of pages | 12 |
| Journal | Journal of the American Chemical Society |
| Volume | 130 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - May 28 2008 |
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ASJC Scopus subject areas
- Chemistry(all)
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Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds. / Kim, Choongik; Wang, Zhiming; Choi, Hyuk Jin; Ha, Young Geun; Facchetti, Antonio; Marks, Tobin J.
In: Journal of the American Chemical Society, Vol. 130, No. 21, 28.05.2008, p. 6867-6878.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds
AU - Kim, Choongik
AU - Wang, Zhiming
AU - Choi, Hyuk Jin
AU - Ha, Young Geun
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2008/5/28
Y1 - 2008/5/28
N2 - We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to ∼500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X3Si-R-SiX3 (R = -C 6H12- and X = Cl, OAc, NMe2, OMe, or R = -C2H4-O-C2H4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X3Si-R-SiX3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures (∼110°C) and adhere tenaciously to a variety of FET gate contact materials such as n +-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10-7 ∼ 10-8 A cm-2 at 2.0 MV/cm) and tunable capacitance values (from 5 to ∼350 nF cm-2). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.
AB - We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to ∼500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X3Si-R-SiX3 (R = -C 6H12- and X = Cl, OAc, NMe2, OMe, or R = -C2H4-O-C2H4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X3Si-R-SiX3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures (∼110°C) and adhere tenaciously to a variety of FET gate contact materials such as n +-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10-7 ∼ 10-8 A cm-2 at 2.0 MV/cm) and tunable capacitance values (from 5 to ∼350 nF cm-2). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.
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U2 - 10.1021/ja801047g
DO - 10.1021/ja801047g
M3 - Article
VL - 130
SP - 6867
EP - 6878
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 21
ER -