TY - JOUR
T1 - Printable Organic-Inorganic Nanoscale Multilayer Gate Dielectrics for Thin-Film Transistors Enabled by a Polymeric Organic Interlayer
AU - Chen, Yao
AU - Zhuang, Xinming
AU - Goldfine, Elise A.
AU - Dravid, Vinayak P.
AU - Bedzyk, Michael J.
AU - Huang, Wei
AU - Facchetti, Antonio
AU - Marks, Tobin J.
PY - 2020
Y1 - 2020
N2 - Here, a new approach to the layer-by-layer solution-processed fabrication of organic/inorganic hybrid self-assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P-PAE, consists of polarizable π-electron phosphonic acid-based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin-coating or blade-coating in air, by alternating P-PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic-ZrOx bilayers, exhibit tunable film thickness, well-defined nanostructures, large electrical capacitance (up to 558 nF cm−2), and good insulating properties (leakage current densities as low as 10−6 A cm−2). Organic thin-film transistors that are fabricated with representative p-/n-type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin-coated PSAND-based devices.
AB - Here, a new approach to the layer-by-layer solution-processed fabrication of organic/inorganic hybrid self-assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P-PAE, consists of polarizable π-electron phosphonic acid-based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin-coating or blade-coating in air, by alternating P-PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic-ZrOx bilayers, exhibit tunable film thickness, well-defined nanostructures, large electrical capacitance (up to 558 nF cm−2), and good insulating properties (leakage current densities as low as 10−6 A cm−2). Organic thin-film transistors that are fabricated with representative p-/n-type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin-coated PSAND-based devices.
KW - flexible electronics
KW - self-assembled nanodielectrics
KW - thin-film transistors
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U2 - 10.1002/adfm.202005069
DO - 10.1002/adfm.202005069
M3 - Article
AN - SCOPUS:85089480848
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
ER -