Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility

Ken Everaerts, Li Zeng, Jonathan W. Hennek, Diana I. Camacho, Deep Jariwala, Michael J. Bedzyk, Mark C Hersam, Tobin J Marks

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (ON:IOFF = 107, SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm2 V-1 s-1, μ FE(max) = 50 cm2 V-1 s-1. Furthermore, X-ray diffraction analysis indicates that the 300 C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

Original languageEnglish
Pages (from-to)11884-11893
Number of pages10
JournalACS Applied Materials and Interfaces
Volume5
Issue number22
DOIs
Publication statusPublished - Nov 27 2013

Fingerprint

Zinc Oxide
Gallium
Indium
Carrier mobility
Thin film transistors
Zinc oxide
Transistors
Electron mobility
Amorphous semiconductors
Fabrication
Temperature
Microstructure
Gate dielectrics
Threshold voltage
Leakage currents
X ray diffraction analysis
Oxide films
Capacitance
Electronic equipment
Display devices

Keywords

  • amorphous oxide field-effect transistor
  • electron mobility
  • hybrid dielectric
  • inkjet-printing
  • low-voltage electronics
  • thin-film transistor

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility. / Everaerts, Ken; Zeng, Li; Hennek, Jonathan W.; Camacho, Diana I.; Jariwala, Deep; Bedzyk, Michael J.; Hersam, Mark C; Marks, Tobin J.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 22, 27.11.2013, p. 11884-11893.

Research output: Contribution to journalArticle

Everaerts, Ken ; Zeng, Li ; Hennek, Jonathan W. ; Camacho, Diana I. ; Jariwala, Deep ; Bedzyk, Michael J. ; Hersam, Mark C ; Marks, Tobin J. / Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 22. pp. 11884-11893.
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