Probing individual nanoscale organic light-emitting diodes with atomic force electroluminescence microscopy and bridge-enhanced nanoscale impedance microscopy

Liam S C Pingree, Matthew T. Russell, Brian J. Scott, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two recently developed atomic force microscopy (AFM) techniques are used to characterize the impedance and charge transport/emission characteristics of individually addressed micro- and nano-scale organic light-emitting diodes (OLEDs). To fabricate independent diodes at this length scale, a suspended silicon nitride membrane shadow mask scheme is employed with semiconductor processing and electron beam lithography. This approach enables the fabrication of individually addressable OLEDs ranging in size from microns down to hundreds of nanometers. Atomic force electroluminescence microscopy (AFEM) and bridge enhanced nanoscale impedance microscopy (BE-NIM) are used to characterize these devices. AFEM offers real-time nanometer-scale spatial resolution mapping of simultaneously acquired current, topography, and light emission data while BE-NIM enables real-time impedance spectroscopy studies of functioning OLEDs. These two AFM techniques are shown to be capable of analyzing device-to-device response variations across a broad range of length scales and to provide unique quantification of intra-array device variations.

Original languageEnglish
Pages (from-to)465-479
Number of pages15
JournalOrganic Electronics: physics, materials, applications
Volume8
Issue number5
DOIs
Publication statusPublished - Oct 2007

Fingerprint

Electroluminescence
Organic light emitting diodes (OLED)
electroluminescence
Microscopic examination
light emitting diodes
impedance
microscopy
Atomic force microscopy
Electron beam lithography
atomic force microscopy
Light emission
Silicon nitride
Topography
Charge transfer
Masks
Diodes
silicon nitrides
Spectroscopy
light emission
Semiconductor materials

Keywords

  • Conductive atomic force microscopy
  • Impedance spectroscopy
  • Interface traps
  • OLEDs
  • Spatial variations
  • Sub-micron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

@article{9c518a45cd094858a6f25e0861e8ebfd,
title = "Probing individual nanoscale organic light-emitting diodes with atomic force electroluminescence microscopy and bridge-enhanced nanoscale impedance microscopy",
abstract = "Two recently developed atomic force microscopy (AFM) techniques are used to characterize the impedance and charge transport/emission characteristics of individually addressed micro- and nano-scale organic light-emitting diodes (OLEDs). To fabricate independent diodes at this length scale, a suspended silicon nitride membrane shadow mask scheme is employed with semiconductor processing and electron beam lithography. This approach enables the fabrication of individually addressable OLEDs ranging in size from microns down to hundreds of nanometers. Atomic force electroluminescence microscopy (AFEM) and bridge enhanced nanoscale impedance microscopy (BE-NIM) are used to characterize these devices. AFEM offers real-time nanometer-scale spatial resolution mapping of simultaneously acquired current, topography, and light emission data while BE-NIM enables real-time impedance spectroscopy studies of functioning OLEDs. These two AFM techniques are shown to be capable of analyzing device-to-device response variations across a broad range of length scales and to provide unique quantification of intra-array device variations.",
keywords = "Conductive atomic force microscopy, Impedance spectroscopy, Interface traps, OLEDs, Spatial variations, Sub-micron",
author = "Pingree, {Liam S C} and Russell, {Matthew T.} and Scott, {Brian J.} and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2007",
month = "10",
doi = "10.1016/j.orgel.2007.02.008",
language = "English",
volume = "8",
pages = "465--479",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "5",

}

TY - JOUR

T1 - Probing individual nanoscale organic light-emitting diodes with atomic force electroluminescence microscopy and bridge-enhanced nanoscale impedance microscopy

AU - Pingree, Liam S C

AU - Russell, Matthew T.

AU - Scott, Brian J.

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2007/10

Y1 - 2007/10

N2 - Two recently developed atomic force microscopy (AFM) techniques are used to characterize the impedance and charge transport/emission characteristics of individually addressed micro- and nano-scale organic light-emitting diodes (OLEDs). To fabricate independent diodes at this length scale, a suspended silicon nitride membrane shadow mask scheme is employed with semiconductor processing and electron beam lithography. This approach enables the fabrication of individually addressable OLEDs ranging in size from microns down to hundreds of nanometers. Atomic force electroluminescence microscopy (AFEM) and bridge enhanced nanoscale impedance microscopy (BE-NIM) are used to characterize these devices. AFEM offers real-time nanometer-scale spatial resolution mapping of simultaneously acquired current, topography, and light emission data while BE-NIM enables real-time impedance spectroscopy studies of functioning OLEDs. These two AFM techniques are shown to be capable of analyzing device-to-device response variations across a broad range of length scales and to provide unique quantification of intra-array device variations.

AB - Two recently developed atomic force microscopy (AFM) techniques are used to characterize the impedance and charge transport/emission characteristics of individually addressed micro- and nano-scale organic light-emitting diodes (OLEDs). To fabricate independent diodes at this length scale, a suspended silicon nitride membrane shadow mask scheme is employed with semiconductor processing and electron beam lithography. This approach enables the fabrication of individually addressable OLEDs ranging in size from microns down to hundreds of nanometers. Atomic force electroluminescence microscopy (AFEM) and bridge enhanced nanoscale impedance microscopy (BE-NIM) are used to characterize these devices. AFEM offers real-time nanometer-scale spatial resolution mapping of simultaneously acquired current, topography, and light emission data while BE-NIM enables real-time impedance spectroscopy studies of functioning OLEDs. These two AFM techniques are shown to be capable of analyzing device-to-device response variations across a broad range of length scales and to provide unique quantification of intra-array device variations.

KW - Conductive atomic force microscopy

KW - Impedance spectroscopy

KW - Interface traps

KW - OLEDs

KW - Spatial variations

KW - Sub-micron

UR - http://www.scopus.com/inward/record.url?scp=34548831662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548831662&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2007.02.008

DO - 10.1016/j.orgel.2007.02.008

M3 - Article

AN - SCOPUS:34548831662

VL - 8

SP - 465

EP - 479

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 5

ER -