Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

J. P. Chang, M. L. Green, V. M. Donnelly, R. L. Opila, J. Eng, J. Sapjeta, P. J. Silverman, B. Weir, H. C. Lu, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800-850 °C using nitric oxide (NO) and oxygen, 1013-1015 cm-2 of nitrogen is incorporated in the ultrathin (≤4 nm) oxide films. Additional nitrogen can be incorporated by low energy ion (15N2) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiOxNy, thermal growth process. AR-XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiOxNy/Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO2.

Original languageEnglish
Pages (from-to)4449-4455
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number9 I
Publication statusPublished - May 2000

Fingerprint

oxynitrides
x ray spectroscopy
photoelectron spectroscopy
nitrogen
silicon
nitric oxide
profiles
ion scattering
oxygen
bears
secondary ion mass spectrometry
furnaces
oxide films
ion implantation
thermal stability
annealing
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Chang, J. P., Green, M. L., Donnelly, V. M., Opila, R. L., Eng, J., Sapjeta, J., ... Garfunkel, E. (2000). Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy. Journal of Applied Physics, 87(9 I), 4449-4455.

Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy. / Chang, J. P.; Green, M. L.; Donnelly, V. M.; Opila, R. L.; Eng, J.; Sapjeta, J.; Silverman, P. J.; Weir, B.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.

In: Journal of Applied Physics, Vol. 87, No. 9 I, 05.2000, p. 4449-4455.

Research output: Contribution to journalArticle

Chang, JP, Green, ML, Donnelly, VM, Opila, RL, Eng, J, Sapjeta, J, Silverman, PJ, Weir, B, Lu, HC, Gustafsson, T & Garfunkel, E 2000, 'Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy', Journal of Applied Physics, vol. 87, no. 9 I, pp. 4449-4455.
Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J et al. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy. Journal of Applied Physics. 2000 May;87(9 I):4449-4455.
Chang, J. P. ; Green, M. L. ; Donnelly, V. M. ; Opila, R. L. ; Eng, J. ; Sapjeta, J. ; Silverman, P. J. ; Weir, B. ; Lu, H. C. ; Gustafsson, T. ; Garfunkel, Eric. / Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 9 I. pp. 4449-4455.
@article{e2e8f15db2704482aa97a104a0c6721c,
title = "Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy",
abstract = "Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800-850 °C using nitric oxide (NO) and oxygen, 1013-1015 cm-2 of nitrogen is incorporated in the ultrathin (≤4 nm) oxide films. Additional nitrogen can be incorporated by low energy ion (15N2) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiOxNy, thermal growth process. AR-XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiOxNy/Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO2.",
author = "Chang, {J. P.} and Green, {M. L.} and Donnelly, {V. M.} and Opila, {R. L.} and J. Eng and J. Sapjeta and Silverman, {P. J.} and B. Weir and Lu, {H. C.} and T. Gustafsson and Eric Garfunkel",
year = "2000",
month = "5",
language = "English",
volume = "87",
pages = "4449--4455",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9 I",

}

TY - JOUR

T1 - Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

AU - Chang, J. P.

AU - Green, M. L.

AU - Donnelly, V. M.

AU - Opila, R. L.

AU - Eng, J.

AU - Sapjeta, J.

AU - Silverman, P. J.

AU - Weir, B.

AU - Lu, H. C.

AU - Gustafsson, T.

AU - Garfunkel, Eric

PY - 2000/5

Y1 - 2000/5

N2 - Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800-850 °C using nitric oxide (NO) and oxygen, 1013-1015 cm-2 of nitrogen is incorporated in the ultrathin (≤4 nm) oxide films. Additional nitrogen can be incorporated by low energy ion (15N2) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiOxNy, thermal growth process. AR-XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiOxNy/Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO2.

AB - Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800-850 °C using nitric oxide (NO) and oxygen, 1013-1015 cm-2 of nitrogen is incorporated in the ultrathin (≤4 nm) oxide films. Additional nitrogen can be incorporated by low energy ion (15N2) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiOxNy, thermal growth process. AR-XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiOxNy/Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0000944801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000944801&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000944801

VL - 87

SP - 4449

EP - 4455

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9 I

ER -