Profiling of electrical doping concentration in ferroelectrics

Francis K. Chai, J. R. Brews, R. D. Schrimpf, Dunbar P Birnie

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14 Citations (Scopus)

Abstract

In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.

Original languageEnglish
Pages (from-to)2517-2527
Number of pages11
JournalJournal of Applied Physics
Volume82
Issue number5
Publication statusPublished - Sep 1 1997

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Chai, F. K., Brews, J. R., Schrimpf, R. D., & Birnie, D. P. (1997). Profiling of electrical doping concentration in ferroelectrics. Journal of Applied Physics, 82(5), 2517-2527.