Abstract
In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 2517-2527 |
| Number of pages | 11 |
| Journal | Journal of Applied Physics |
| Volume | 82 |
| Issue number | 5 |
| Publication status | Published - Sep 1 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Chai, F. K., Brews, J. R., Schrimpf, R. D., & Birnie, D. P. (1997). Profiling of electrical doping concentration in ferroelectrics. Journal of Applied Physics, 82(5), 2517-2527.