Abstract
In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 2517-2527 |
| Number of pages | 11 |
| Journal | Journal of Applied Physics |
| Volume | 82 |
| Issue number | 5 |
| Publication status | Published - Sep 1 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Profiling of electrical doping concentration in ferroelectrics. / Chai, Francis K.; Brews, J. R.; Schrimpf, R. D.; Birnie, Dunbar P.
In: Journal of Applied Physics, Vol. 82, No. 5, 01.09.1997, p. 2517-2527.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Profiling of electrical doping concentration in ferroelectrics
AU - Chai, Francis K.
AU - Brews, J. R.
AU - Schrimpf, R. D.
AU - Birnie, Dunbar P
PY - 1997/9/1
Y1 - 1997/9/1
N2 - In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
AB - In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
UR - http://www.scopus.com/inward/record.url?scp=0031237446&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031237446&partnerID=8YFLogxK
M3 - Article
VL - 82
SP - 2517
EP - 2527
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
ER -