In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance-voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
|Number of pages||11|
|Journal||Journal of Applied Physics|
|Publication status||Published - Sep 1 1997|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)