Properties and application of double-walled carbon nanotubes sorted by outer-wall electronic type

Alexander A. Green, Mark C Hersam

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Double-walled carbon nanotubes (DWNTs) can adopt four distinct permutations arising from the electronic type (metallic or semiconducting) of their inner and outer walls. This polydispersity limits the utility of DWNTs in applications such as thin film electronics. We demonstrate that density gradient ultracentrifugation can be employed to address this source of heterogeneity by producing DWNTs with well-defined outer-wall electronic types. Optical absorption measurements of sorted DWNTs reveal outer-wall purities of 96% and 98% for sorted semiconducting and metallic samples, respectively. Electrical characterization of semiconducting and metallic outer-wall DWNTs in thin film transistors directly confirms the efficacy of these separations, with semiconducting DWNT devices yielding on/off ratios 2 orders of magnitude higher than comparable metallic DWNT devices.

Original languageEnglish
Pages (from-to)1459-1467
Number of pages9
JournalACS Nano
Volume5
Issue number2
DOIs
Publication statusPublished - Feb 22 2011

Fingerprint

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
electronics
permutations
Polydispersity
Thin film transistors
thin films
Light absorption
purity
optical absorption
Electronic equipment
transistors
Thin films
gradients

Keywords

  • carbon nanotube
  • density gradient ultracentrifugation
  • double
  • purification
  • separation
  • sorting
  • transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Properties and application of double-walled carbon nanotubes sorted by outer-wall electronic type. / Green, Alexander A.; Hersam, Mark C.

In: ACS Nano, Vol. 5, No. 2, 22.02.2011, p. 1459-1467.

Research output: Contribution to journalArticle

@article{105f0aa3ab934129920beceae750d6fc,
title = "Properties and application of double-walled carbon nanotubes sorted by outer-wall electronic type",
abstract = "Double-walled carbon nanotubes (DWNTs) can adopt four distinct permutations arising from the electronic type (metallic or semiconducting) of their inner and outer walls. This polydispersity limits the utility of DWNTs in applications such as thin film electronics. We demonstrate that density gradient ultracentrifugation can be employed to address this source of heterogeneity by producing DWNTs with well-defined outer-wall electronic types. Optical absorption measurements of sorted DWNTs reveal outer-wall purities of 96{\%} and 98{\%} for sorted semiconducting and metallic samples, respectively. Electrical characterization of semiconducting and metallic outer-wall DWNTs in thin film transistors directly confirms the efficacy of these separations, with semiconducting DWNT devices yielding on/off ratios 2 orders of magnitude higher than comparable metallic DWNT devices.",
keywords = "carbon nanotube, density gradient ultracentrifugation, double, purification, separation, sorting, transistor",
author = "Green, {Alexander A.} and Hersam, {Mark C}",
year = "2011",
month = "2",
day = "22",
doi = "10.1021/nn103263b",
language = "English",
volume = "5",
pages = "1459--1467",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Properties and application of double-walled carbon nanotubes sorted by outer-wall electronic type

AU - Green, Alexander A.

AU - Hersam, Mark C

PY - 2011/2/22

Y1 - 2011/2/22

N2 - Double-walled carbon nanotubes (DWNTs) can adopt four distinct permutations arising from the electronic type (metallic or semiconducting) of their inner and outer walls. This polydispersity limits the utility of DWNTs in applications such as thin film electronics. We demonstrate that density gradient ultracentrifugation can be employed to address this source of heterogeneity by producing DWNTs with well-defined outer-wall electronic types. Optical absorption measurements of sorted DWNTs reveal outer-wall purities of 96% and 98% for sorted semiconducting and metallic samples, respectively. Electrical characterization of semiconducting and metallic outer-wall DWNTs in thin film transistors directly confirms the efficacy of these separations, with semiconducting DWNT devices yielding on/off ratios 2 orders of magnitude higher than comparable metallic DWNT devices.

AB - Double-walled carbon nanotubes (DWNTs) can adopt four distinct permutations arising from the electronic type (metallic or semiconducting) of their inner and outer walls. This polydispersity limits the utility of DWNTs in applications such as thin film electronics. We demonstrate that density gradient ultracentrifugation can be employed to address this source of heterogeneity by producing DWNTs with well-defined outer-wall electronic types. Optical absorption measurements of sorted DWNTs reveal outer-wall purities of 96% and 98% for sorted semiconducting and metallic samples, respectively. Electrical characterization of semiconducting and metallic outer-wall DWNTs in thin film transistors directly confirms the efficacy of these separations, with semiconducting DWNT devices yielding on/off ratios 2 orders of magnitude higher than comparable metallic DWNT devices.

KW - carbon nanotube

KW - density gradient ultracentrifugation

KW - double

KW - purification

KW - separation

KW - sorting

KW - transistor

UR - http://www.scopus.com/inward/record.url?scp=79951909960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951909960&partnerID=8YFLogxK

U2 - 10.1021/nn103263b

DO - 10.1021/nn103263b

M3 - Article

VL - 5

SP - 1459

EP - 1467

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -