Properties and improved space survivability of POSS (polyhedral oligomeric silsesquioxane) polyimides

Sandra J. Tomczak, Darreil Marchant, Steve Svejda, Timothy K. Minton, Amy L. Brunsvold, Irina Gouzman, Eitan Grossman, George C Schatz, Diego Troya, LiPeng Sun, Rene I. Gonzalez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)


Properties and improved space survivability of polyhedral oligomeric silsesquioxane (POSS) polyimides (PI) were investigated. It was found that the room temperature modulus of polyimide is unaffected by POSS, and the modulus at temperatures greater than the Tg of the polyimide is doubled by the incorporation of the 20 wt% POSS. To simulate lower earth orbit (LEO) conditions, POSS PI films underwent exposure to a hyperthermal oxygen atom beam. The films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy and surface profilometry.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM. Chipara, D.L. Edwards, R.S. Benson, S. Phillips
Number of pages12
Publication statusPublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004


Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tomczak, S. J., Marchant, D., Svejda, S., Minton, T. K., Brunsvold, A. L., Gouzman, I., ... Gonzalez, R. I. (2005). Properties and improved space survivability of POSS (polyhedral oligomeric silsesquioxane) polyimides. In M. Chipara, D. L. Edwards, R. S. Benson, & S. Phillips (Eds.), Materials Research Society Symposium Proceedings (Vol. 851, pp. 395-406). [NN9.1]