Abstract
The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.
| Original language | English |
|---|---|
| Pages (from-to) | 7317-7320 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 52 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1981 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs. / Petroff, P. M.; Feldman, Leonard C; Cho, A. Y.; Williams, R. S.
In: Journal of Applied Physics, Vol. 52, No. 12, 12.1981, p. 7317-7320.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.
AU - Petroff, P. M.
AU - Feldman, Leonard C
AU - Cho, A. Y.
AU - Williams, R. S.
PY - 1981/12
Y1 - 1981/12
N2 - The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.
AB - The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.
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UR - http://www.scopus.com/inward/citedby.url?scp=0019681863&partnerID=8YFLogxK
U2 - 10.1063/1.328722
DO - 10.1063/1.328722
M3 - Article
VL - 52
SP - 7317
EP - 7320
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -