The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)