PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.

P. M. Petroff; Leonard C Feldman; A. Y. Cho; R. S. Williams

doi:10.1063/1.328722

PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.

P. M. Petroff, Leonard C Feldman, A. Y. Cho, R. S. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.

Original language	English
Pages (from-to)	7317-7320
Number of pages	4
Journal	Journal of Applied Physics
Volume	52
Issue number	12
DOIs	https://doi.org/10.1063/1.328722
Publication status	Published - Dec 1981

ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

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title = "PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.",

abstract = "The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.",

author = "Petroff, {P. M.} and Feldman, {Leonard C} and Cho, {A. Y.} and Williams, {R. S.}",

year = "1981",

month = dec,

doi = "10.1063/1.328722",

language = "English",

volume = "52",

pages = "7317--7320",

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AU - Petroff, P. M.

AU - Feldman, Leonard C

AU - Cho, A. Y.

AU - Williams, R. S.

PY - 1981/12

Y1 - 1981/12

N2 - The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.

AB - The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.

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