PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.

P. M. Petroff, Leonard C Feldman, A. Y. Cho, R. S. Williams

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The structural perfection and epitaxial growth process of Al films deposited by molecular beam epitaxy (MBE) on (100)GaAs substrates have been analyzed by transmission electron microscopy (TEM) and Rutherford backscattering analysis (RBS). Two epitaxial relationships between the Al film and (100) GaAs are observed. For both epitaxial orientations the misfit elastic strain at the interface is accommodated by misfit dislocations localized in the Al film for film thickness of greater than equivalent to 600 A. Under these conditions the GaAs substrate at the interface is strain free and dislocation free.

Original languageEnglish
Pages (from-to)7317-7320
Number of pages4
JournalJournal of Applied Physics
Volume52
Issue number12
DOIs
Publication statusPublished - Dec 1981

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aluminum
backscattering
film thickness
molecular beam epitaxy
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs. / Petroff, P. M.; Feldman, Leonard C; Cho, A. Y.; Williams, R. S.

In: Journal of Applied Physics, Vol. 52, No. 12, 12.1981, p. 7317-7320.

Research output: Contribution to journalArticle

Petroff, PM, Feldman, LC, Cho, AY & Williams, RS 1981, 'PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs.', Journal of Applied Physics, vol. 52, no. 12, pp. 7317-7320. https://doi.org/10.1063/1.328722
Petroff, P. M. ; Feldman, Leonard C ; Cho, A. Y. ; Williams, R. S. / PROPERTIES OF ALUMINUM EPITAXIAL GROWTH ON GaAs. In: Journal of Applied Physics. 1981 ; Vol. 52, No. 12. pp. 7317-7320.
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