Abstract
Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC may facilitate heterogeneous integration of SiC devices with silicon CMOS circuits, and lead to lower cost SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 ?m thick 4H-SiC exfoliated films, there is an optimum implantation dose of ? 6 × 1016 cm?2 as well as an optimum implantation temperature of ? 300?C. Some exploratory data for 500 keV and 1 MeV implant energies are also shown.
| Original language | English |
|---|---|
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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Properties of H+ implanted 4H-SiC as related to exfoliation of thin crystalline films. / Amarasinghe, V. P.; Wielunski, L.; Barcz, A.; Feldman, Leonard C; Celler, G. K.
In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 3, 2014.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Properties of H+ implanted 4H-SiC as related to exfoliation of thin crystalline films
AU - Amarasinghe, V. P.
AU - Wielunski, L.
AU - Barcz, A.
AU - Feldman, Leonard C
AU - Celler, G. K.
PY - 2014
Y1 - 2014
N2 - Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC may facilitate heterogeneous integration of SiC devices with silicon CMOS circuits, and lead to lower cost SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 ?m thick 4H-SiC exfoliated films, there is an optimum implantation dose of ? 6 × 1016 cm?2 as well as an optimum implantation temperature of ? 300?C. Some exploratory data for 500 keV and 1 MeV implant energies are also shown.
AB - Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC may facilitate heterogeneous integration of SiC devices with silicon CMOS circuits, and lead to lower cost SiC power devices. Practical device structures require H+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 ?m thick 4H-SiC exfoliated films, there is an optimum implantation dose of ? 6 × 1016 cm?2 as well as an optimum implantation temperature of ? 300?C. Some exploratory data for 500 keV and 1 MeV implant energies are also shown.
UR - http://www.scopus.com/inward/record.url?scp=84893777756&partnerID=8YFLogxK
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U2 - 10.1149/2.001404jss
DO - 10.1149/2.001404jss
M3 - Article
AN - SCOPUS:84893777756
VL - 3
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 3
ER -