Abstract
In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
| Original language | English |
|---|---|
| Article number | 073510 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Aug 25 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics. / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.
In: Applied Physics Letters, Vol. 89, No. 7, 073510, 25.08.2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics
AU - Ju, Sanghyun
AU - Lee, Kangho
AU - Janes, David B.
AU - Dwivedi, Ramesh C.
AU - Baffour-Awuah, Habibah
AU - Wilkins, R.
AU - Yoon, Myung Han
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2006/8/25
Y1 - 2006/8/25
N2 - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
AB - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.
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U2 - 10.1063/1.2336744
DO - 10.1063/1.2336744
M3 - Article
AN - SCOPUS:33747454960
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
M1 - 073510
ER -