Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Sanghyun Ju; Kangho Lee; David B. Janes; Ramesh C. Dwivedi; Habibah Baffour-Awuah; R. Wilkins; Myung Han Yoon; Antonio Facchetti; Tobin J. Mark

doi:10.1063/1.2336744

Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung Han Yoon, Antonio Facchetti, Tobin J. Mark

Northwestern University

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO ₂ gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V _th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V _th parameters of the SiO ₂-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H ⁺ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H ⁺ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO ₂ gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

Original language	English
Article number	073510
Journal	Applied Physics Letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2336744
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2336744

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Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics. / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Mark, Tobin J.

In: Applied Physics Letters, Vol. 89, No. 7, 073510, 2006.

Research output: Contribution to journal › Article › peer-review

@article{db6b573aaa0c45f8a62b0ded1d5ace20,

title = "Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics",

abstract = "In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.",

author = "Sanghyun Ju and Kangho Lee and Janes, {David B.} and Dwivedi, {Ramesh C.} and Habibah Baffour-Awuah and R. Wilkins and Yoon, {Myung Han} and Antonio Facchetti and Mark, {Tobin J.}",

note = "Funding Information: The authors thank the NASA Institute for Nanoelectronics and Computing (NCC2-1363) and DARPA/ARO W911NF-05-1-0187 for support of this research. The work performed at PVAMU is supported by NASA/Ames (NNA05CS72A) and through the NASA Texas Institute for Intelligent Bio-Nano Materials and Structures for Aerospace Vehicles (NCC-01-02003) and the NASA Center for Applied Radiation Research (NCC-9-114). Proton irradiations were conducted at the Texas A&M Cyclotron Institute. ",

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AU - Dwivedi, Ramesh C.

AU - Baffour-Awuah, Habibah

AU - Wilkins, R.

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Mark, Tobin J.

N1 - Funding Information: The authors thank the NASA Institute for Nanoelectronics and Computing (NCC2-1363) and DARPA/ARO W911NF-05-1-0187 for support of this research. The work performed at PVAMU is supported by NASA/Ames (NNA05CS72A) and through the NASA Texas Institute for Intelligent Bio-Nano Materials and Structures for Aerospace Vehicles (NCC-01-02003) and the NASA Center for Applied Radiation Research (NCC-9-114). Proton irradiations were conducted at the Texas A&M Cyclotron Institute.

PY - 2006

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N2 - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

AB - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

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