Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Sanghyun Ju, Kangho Lee, David B. Janes, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

Original languageEnglish
Article number073510
JournalApplied Physics Letters
Volume89
Issue number7
DOIs
Publication statusPublished - Aug 25 2006

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nanowires
transistors
hardness
field effect transistors
protons
radiation
irradiation
dosage
insulators
traps
radiation tolerance
threshold voltage
slopes
oxides
shift
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics. / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Applied Physics Letters, Vol. 89, No. 7, 073510, 25.08.2006.

Research output: Contribution to journalArticle

Ju, S, Lee, K, Janes, DB, Dwivedi, RC, Baffour-Awuah, H, Wilkins, R, Yoon, MH, Facchetti, A & Marks, TJ 2006, 'Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics', Applied Physics Letters, vol. 89, no. 7, 073510. https://doi.org/10.1063/1.2336744
Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Dwivedi, Ramesh C. ; Baffour-Awuah, Habibah ; Wilkins, R. ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics. In: Applied Physics Letters. 2006 ; Vol. 89, No. 7.
@article{db6b573aaa0c45f8a62b0ded1d5ace20,
title = "Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics",
abstract = "In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.",
author = "Sanghyun Ju and Kangho Lee and Janes, {David B.} and Dwivedi, {Ramesh C.} and Habibah Baffour-Awuah and R. Wilkins and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin J}",
year = "2006",
month = "8",
day = "25",
doi = "10.1063/1.2336744",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

AU - Ju, Sanghyun

AU - Lee, Kangho

AU - Janes, David B.

AU - Dwivedi, Ramesh C.

AU - Baffour-Awuah, Habibah

AU - Wilkins, R.

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2006/8/25

Y1 - 2006/8/25

N2 - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

AB - In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO 2 gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V th) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V th parameters of the SiO 2-based ZnO NW-FETs display average shifts of ∼-4.0 and ∼-10.9 V for 5.71 and 285 krad(Si) H + irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H + irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO 2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

UR - http://www.scopus.com/inward/record.url?scp=33747454960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747454960&partnerID=8YFLogxK

U2 - 10.1063/1.2336744

DO - 10.1063/1.2336744

M3 - Article

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073510

ER -