TY - JOUR
T1 - Pseudomorphic growth and strain relaxation of α-Zn3P 2 on GaAs(001) by molecular beam epitaxy
AU - Bosco, Jeffrey P.
AU - Kimball, Gregory M.
AU - Lewis, Nathan S.
AU - Atwater, Harry A.
N1 - Funding Information:
This work was supported by the Dow Chemical Company and by the Department of Energy, Office of Basic Energy Sciences under Grant no. DE-FG02-03ER15483 . The authors would like to thank Steve Rozeveld for his assistance with the TEM and SAED measurements. J.P.B. acknowledges support under an NSF graduate research fellowship , and G.M.K. acknowledges support under an NDSEG fellowship .
PY - 2013
Y1 - 2013
N2 - Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.
AB - Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.
KW - A1. Pseudomorphic growth
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Phosphides
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2012.10.054
DO - 10.1016/j.jcrysgro.2012.10.054
M3 - Article
AN - SCOPUS:84888376866
VL - 363
SP - 205
EP - 210
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -