Pseudomorphic growth and strain relaxation of α-Zn3P 2 on GaAs(001) by molecular beam epitaxy

Jeffrey P. Bosco, Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalJournal of Crystal Growth
Volume363
DOIs
Publication statusPublished - Jan 1 2013

Keywords

  • A1. Pseudomorphic growth
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Phosphides
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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