Pseudomorphic growth and strain relaxation of α-Zn3P 2 on GaAs(001) by molecular beam epitaxy

Jeffrey P. Bosco; Gregory M. Kimball; Nathan S. Lewis; Harry A. Atwater

doi:10.1016/j.jcrysgro.2012.10.054

Pseudomorphic growth and strain relaxation of α-Zn₃P ₂ on GaAs(001) by molecular beam epitaxy

Jeffrey P. Bosco, Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

California Institute of Technology

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Tetragonal zinc phosphide (α-Zn₃P₂) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn ₃P₂(004)∥GaAs(002) and Zn₃P ₂(202)∥GaAs(111). Partial relaxation of the Zn₃P ₂ lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm² V^-1 s^-1) were comparable to the carrier mobilities that have been reported for bulk Zn₃P₂ single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.

Original language	English
Pages (from-to)	205-210
Number of pages	6
Journal	Journal of Crystal Growth
Volume	363
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.10.054
Publication status	Published - Jan 1 2013

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Keywords

A1. Pseudomorphic growth
A1. X-ray diffraction
A3. Molecular beam epitaxy
B1. Phosphides
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Bosco, J. P., Kimball, G. M., Lewis, N. S., & Atwater, H. A. (2013). Pseudomorphic growth and strain relaxation of α-Zn₃P ₂ on GaAs(001) by molecular beam epitaxy. Journal of Crystal Growth, 363, 205-210. https://doi.org/10.1016/j.jcrysgro.2012.10.054

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abstract = "Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.",

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AU - Kimball, Gregory M.

AU - Lewis, Nathan S.

AU - Atwater, Harry A.

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N2 - Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.

AB - Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn 3P2(004)∥GaAs(002) and Zn3P 2(202)∥GaAs(111). Partial relaxation of the Zn3P 2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the fillms were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm2 V-1 s-1) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.

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KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Phosphides

KW - B3. Solar cells

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10.1016/j.jcrysgro.2012.10.054