Pseudomorphic growth of GexSi1- x on silicon by molecular beam epitaxy

J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, R. T. Lynch

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180 Citations (Scopus)


GexSi1-x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750°C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction xc. Beyond xc growth is rough. xc increases from 0.1 at 750°C to 1.0 at ∼550°C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the GexSi1- x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as l/4 μm.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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