Abstract
Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.
Original language | English |
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Pages (from-to) | 102-104 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 44 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1 1984 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)