PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.

J. C. Bean, T. T. Sheng, Leonard C Feldman, A. T. Fiory, R. T. Lynch

Research output: Contribution to journal › Article

174 Citations (Scopus)

Abstract

Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number1
DOIs
Publication statusPublished - Jan 1 1984

Fingerprint

molecular beam epitaxy
silicon
crystallinity
germanium
backscattering
transmission electron microscopy
temperature
thin films
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. / Bean, J. C.; Sheng, T. T.; Feldman, Leonard C; Fiory, A. T.; Lynch, R. T.

In: Applied Physics Letters, Vol. 44, No. 1, 01.01.1984, p. 102-104.

Research output: Contribution to journal › Article

Bean, JC, Sheng, TT, Feldman, LC, Fiory, AT & Lynch, RT 1984, 'PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.', Applied Physics Letters, vol. 44, no. 1, pp. 102-104. https://doi.org/10.1063/1.94571
Bean JC, Sheng TT, Feldman LC, Fiory AT, Lynch RT. PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. Applied Physics Letters. 1984 Jan 1;44(1):102-104. https://doi.org/10.1063/1.94571
Bean, J. C. ; Sheng, T. T. ; Feldman, Leonard C ; Fiory, A. T. ; Lynch, R. T. / PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. In: Applied Physics Letters. 1984 ; Vol. 44, No. 1. pp. 102-104.
@article{ea54a5a56dd14d3d84140f343c3dd29c,
title = "PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.",
abstract = "Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.",
author = "Bean, {J. C.} and Sheng, {T. T.} and Feldman, {Leonard C} and Fiory, {A. T.} and Lynch, {R. T.}",
year = "1984",
month = "1",
day = "1",
doi = "10.1063/1.94571",
language = "English",
volume = "44",
pages = "102--104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.

AU - Bean, J. C.

AU - Sheng, T. T.

AU - Feldman, Leonard C

AU - Fiory, A. T.

AU - Lynch, R. T.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.

AB - Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.

UR - http://www.scopus.com/inward/record.url?scp=0021177531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021177531&partnerID=8YFLogxK

U2 - 10.1063/1.94571

DO - 10.1063/1.94571

M3 - Article

VL - 44

SP - 102

EP - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -

Access to Document