PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.

J. C. Bean, T. T. Sheng, Leonard C Feldman, A. T. Fiory, R. T. Lynch

Research output: Contribution to journalArticle

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Abstract

Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number1
DOIs
Publication statusPublished - Jan 1 1984

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molecular beam epitaxy
silicon
crystallinity
germanium
backscattering
transmission electron microscopy
temperature
thin films
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. / Bean, J. C.; Sheng, T. T.; Feldman, Leonard C; Fiory, A. T.; Lynch, R. T.

In: Applied Physics Letters, Vol. 44, No. 1, 01.01.1984, p. 102-104.

Research output: Contribution to journalArticle

Bean, J. C. ; Sheng, T. T. ; Feldman, Leonard C ; Fiory, A. T. ; Lynch, R. T. / PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. In: Applied Physics Letters. 1984 ; Vol. 44, No. 1. pp. 102-104.
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