Abstract
Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.
| Original language | English |
|---|---|
| Pages (from-to) | 102-104 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 44 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1 1984 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. / Bean, J. C.; Sheng, T. T.; Feldman, Leonard C; Fiory, A. T.; Lynch, R. T.
In: Applied Physics Letters, Vol. 44, No. 1, 01.01.1984, p. 102-104.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.
AU - Bean, J. C.
AU - Sheng, T. T.
AU - Feldman, Leonard C
AU - Fiory, A. T.
AU - Lynch, R. T.
PY - 1984/1/1
Y1 - 1984/1/1
N2 - Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.
AB - Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.
UR - http://www.scopus.com/inward/record.url?scp=0021177531&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0021177531&partnerID=8YFLogxK
U2 - 10.1063/1.94571
DO - 10.1063/1.94571
M3 - Article
AN - SCOPUS:0021177531
VL - 44
SP - 102
EP - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
ER -