PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.

J. C. Bean; T. T. Sheng; Leonard C Feldman; A. T. Fiory; R. T. Lynch

doi:10.1063/1.94571

PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY.

J. C. Bean, T. T. Sheng, Leonard C Feldman, A. T. Fiory, R. T. Lynch

Rutgers University

Research output: Contribution to journal › Article

179 Citations (Scopus)

Abstract

Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.

Original language	English
Pages (from-to)	102-104
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	1
DOIs	https://doi.org/10.1063/1.94571
Publication status	Published - Jan 1 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., & Lynch, R. T. (1984). PSEUDOMORPHIC GROWTH OF Ge//xSi//1// minus //x ON SILICON BY MOLECULAR BEAM EPITAXY. Applied Physics Letters, 44(1), 102-104. https://doi.org/10.1063/1.94571

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abstract = "Ge//xSi//1// minus //x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400-750 degree C by means of molecular beam epitaxy. At a given growth temperature films grow in a smooth, two-dimensional manner up to a critical germanium fraction x//c. Beyond x//c growth is rough. x//c increases from 0. 1 at 750 degree C to 1. 0 at approximately 550 degree C. Rutherford ion backscattering measurements indicate good crystallinity over a wide range of growth conditions. Transmission electron microscopy reveals that in thin films, the lattice mismatch between the Ge//xSi//1// minus //x and Si layers can be accommodated by lattice distortion rather than by misfit dislocation formation. This pseudomorphic growth condition can persist to alloy thicknesses as large as 1/4 mu m.",

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