Pulsed excimer laser deposition of potassium titanyl phosphate films

Fulin Xiong, Robert P. H. Chang, M. E. Hagerman, V. L. Kozhevnikov, Kenneth R Poeppelmeier, Haitain Zhou, G. K. Wong, J. B. Ketterson, C. W. White

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The deposition of highly oriented KTP thin films by pulsed excimer laser ablation (PELA) is demonstrated. The KTP thin films were fabricated on sapphire substrates, or polycrystalline films on silicon substrates at relatively low substrate temperatures. The preferential crystalline orientation was dependent on the substrate temperature and the oxygen partial pressure. The films showed high SHG response with deff comparable to the bulk value of a KTP crystal.

Original languageEnglish
Pages (from-to)161-163
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number2
DOIs
Publication statusPublished - Jan 1994

Fingerprint

potassium phosphates
laser deposition
excimer lasers
pulsed lasers
thin films
laser ablation
partial pressure
sapphire
temperature
silicon
oxygen
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Pulsed excimer laser deposition of potassium titanyl phosphate films. / Xiong, Fulin; Chang, Robert P. H.; Hagerman, M. E.; Kozhevnikov, V. L.; Poeppelmeier, Kenneth R; Zhou, Haitain; Wong, G. K.; Ketterson, J. B.; White, C. W.

In: Applied Physics Letters, Vol. 64, No. 2, 01.1994, p. 161-163.

Research output: Contribution to journalArticle

Xiong, F, Chang, RPH, Hagerman, ME, Kozhevnikov, VL, Poeppelmeier, KR, Zhou, H, Wong, GK, Ketterson, JB & White, CW 1994, 'Pulsed excimer laser deposition of potassium titanyl phosphate films', Applied Physics Letters, vol. 64, no. 2, pp. 161-163. https://doi.org/10.1063/1.111551
Xiong, Fulin ; Chang, Robert P. H. ; Hagerman, M. E. ; Kozhevnikov, V. L. ; Poeppelmeier, Kenneth R ; Zhou, Haitain ; Wong, G. K. ; Ketterson, J. B. ; White, C. W. / Pulsed excimer laser deposition of potassium titanyl phosphate films. In: Applied Physics Letters. 1994 ; Vol. 64, No. 2. pp. 161-163.
@article{7218e0aef2444b45895b202061816641,
title = "Pulsed excimer laser deposition of potassium titanyl phosphate films",
abstract = "The deposition of highly oriented KTP thin films by pulsed excimer laser ablation (PELA) is demonstrated. The KTP thin films were fabricated on sapphire substrates, or polycrystalline films on silicon substrates at relatively low substrate temperatures. The preferential crystalline orientation was dependent on the substrate temperature and the oxygen partial pressure. The films showed high SHG response with deff comparable to the bulk value of a KTP crystal.",
author = "Fulin Xiong and Chang, {Robert P. H.} and Hagerman, {M. E.} and Kozhevnikov, {V. L.} and Poeppelmeier, {Kenneth R} and Haitain Zhou and Wong, {G. K.} and Ketterson, {J. B.} and White, {C. W.}",
year = "1994",
month = "1",
doi = "10.1063/1.111551",
language = "English",
volume = "64",
pages = "161--163",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Pulsed excimer laser deposition of potassium titanyl phosphate films

AU - Xiong, Fulin

AU - Chang, Robert P. H.

AU - Hagerman, M. E.

AU - Kozhevnikov, V. L.

AU - Poeppelmeier, Kenneth R

AU - Zhou, Haitain

AU - Wong, G. K.

AU - Ketterson, J. B.

AU - White, C. W.

PY - 1994/1

Y1 - 1994/1

N2 - The deposition of highly oriented KTP thin films by pulsed excimer laser ablation (PELA) is demonstrated. The KTP thin films were fabricated on sapphire substrates, or polycrystalline films on silicon substrates at relatively low substrate temperatures. The preferential crystalline orientation was dependent on the substrate temperature and the oxygen partial pressure. The films showed high SHG response with deff comparable to the bulk value of a KTP crystal.

AB - The deposition of highly oriented KTP thin films by pulsed excimer laser ablation (PELA) is demonstrated. The KTP thin films were fabricated on sapphire substrates, or polycrystalline films on silicon substrates at relatively low substrate temperatures. The preferential crystalline orientation was dependent on the substrate temperature and the oxygen partial pressure. The films showed high SHG response with deff comparable to the bulk value of a KTP crystal.

UR - http://www.scopus.com/inward/record.url?scp=0027927428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027927428&partnerID=8YFLogxK

U2 - 10.1063/1.111551

DO - 10.1063/1.111551

M3 - Article

VL - 64

SP - 161

EP - 163

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -