Pulsed organometallic beam epitaxy of complex oxide films

S. J. Duray, D. B. Buchholz, S. N. Song, D. S. Richeson, J. B. Ketterson, Tobin J Marks, Robert P. H. Chang

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10 -4-10-2 Torr) and low substrate temperature (600-680°C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

Original languageEnglish
Pages (from-to)1503-1505
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number12
DOIs
Publication statusPublished - 1991

Fingerprint

epitaxy
oxide films
oxygen plasma
laminates
pulsed laser deposition
gas pressure
heat treatment
vapor deposition
oxidation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Duray, S. J., Buchholz, D. B., Song, S. N., Richeson, D. S., Ketterson, J. B., Marks, T. J., & Chang, R. P. H. (1991). Pulsed organometallic beam epitaxy of complex oxide films. Applied Physics Letters, 59(12), 1503-1505. https://doi.org/10.1063/1.105301

Pulsed organometallic beam epitaxy of complex oxide films. / Duray, S. J.; Buchholz, D. B.; Song, S. N.; Richeson, D. S.; Ketterson, J. B.; Marks, Tobin J; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 59, No. 12, 1991, p. 1503-1505.

Research output: Contribution to journalArticle

Duray, SJ, Buchholz, DB, Song, SN, Richeson, DS, Ketterson, JB, Marks, TJ & Chang, RPH 1991, 'Pulsed organometallic beam epitaxy of complex oxide films', Applied Physics Letters, vol. 59, no. 12, pp. 1503-1505. https://doi.org/10.1063/1.105301
Duray SJ, Buchholz DB, Song SN, Richeson DS, Ketterson JB, Marks TJ et al. Pulsed organometallic beam epitaxy of complex oxide films. Applied Physics Letters. 1991;59(12):1503-1505. https://doi.org/10.1063/1.105301
Duray, S. J. ; Buchholz, D. B. ; Song, S. N. ; Richeson, D. S. ; Ketterson, J. B. ; Marks, Tobin J ; Chang, Robert P. H. / Pulsed organometallic beam epitaxy of complex oxide films. In: Applied Physics Letters. 1991 ; Vol. 59, No. 12. pp. 1503-1505.
@article{97e1cc16f8884f4684f5d5df583e4d80,
title = "Pulsed organometallic beam epitaxy of complex oxide films",
abstract = "We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10 -4-10-2 Torr) and low substrate temperature (600-680°C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).",
author = "Duray, {S. J.} and Buchholz, {D. B.} and Song, {S. N.} and Richeson, {D. S.} and Ketterson, {J. B.} and Marks, {Tobin J} and Chang, {Robert P. H.}",
year = "1991",
doi = "10.1063/1.105301",
language = "English",
volume = "59",
pages = "1503--1505",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Pulsed organometallic beam epitaxy of complex oxide films

AU - Duray, S. J.

AU - Buchholz, D. B.

AU - Song, S. N.

AU - Richeson, D. S.

AU - Ketterson, J. B.

AU - Marks, Tobin J

AU - Chang, Robert P. H.

PY - 1991

Y1 - 1991

N2 - We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10 -4-10-2 Torr) and low substrate temperature (600-680°C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

AB - We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10 -4-10-2 Torr) and low substrate temperature (600-680°C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

UR - http://www.scopus.com/inward/record.url?scp=21544455172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544455172&partnerID=8YFLogxK

U2 - 10.1063/1.105301

DO - 10.1063/1.105301

M3 - Article

AN - SCOPUS:21544455172

VL - 59

SP - 1503

EP - 1505

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -