Pulsed organometallic beam epitaxy of complex oxide films

S. J. Duray, D. B. Buchholz, S. N. Song, D. S. Richeson, J. B. Ketterson, Tobin J Marks, Robert P. H. Chang

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Abstract

We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10 -4-10-2 Torr) and low substrate temperature (600-680°C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

Original languageEnglish
Pages (from-to)1503-1505
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number12
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Duray, S. J., Buchholz, D. B., Song, S. N., Richeson, D. S., Ketterson, J. B., Marks, T. J., & Chang, R. P. H. (1991). Pulsed organometallic beam epitaxy of complex oxide films. Applied Physics Letters, 59(12), 1503-1505. https://doi.org/10.1063/1.105301