Pyroelectricity in Highly Stressed Quasi-Amorphous Thin Films

Vera Lyahovitskaya, Ilya Zon, Yishay Feldman, Sidney R. Cohen, Alexander K. Tagantsev, Igor Lubomirsky

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Abstract

The magnitude of pyroelectricity in highly stressed quasi-amorphous thin films was analyzed. The amorphous BaTiO3 layers were deposited by radio frequency (RF) magnetron oxygen plasma sputtering. The stress in the BaTiO3 films was measured by the substrate curvature method. It was found that the films that passed through the temperature gradient showed large pyroelectric effect over the temperature range of 20-150 °C.

Original languageEnglish
Pages (from-to)1826-1828
Number of pages3
JournalAdvanced Materials
Volume15
Issue number21
DOIs
Publication statusPublished - Nov 4 2003

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ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lyahovitskaya, V., Zon, I., Feldman, Y., Cohen, S. R., Tagantsev, A. K., & Lubomirsky, I. (2003). Pyroelectricity in Highly Stressed Quasi-Amorphous Thin Films. Advanced Materials, 15(21), 1826-1828. https://doi.org/10.1002/adma.200305346