Quantifying the semiconducting fraction in single-walled carbon nanotube samples through comparative atomic force and photoluminescence microscopies

Anton V. Naumov, Oleg A. Kuznetsov, Avetik R. Harutyunyan, Alexander A. Green, Mark C. Hersam, Daniel E. Resasco, Pavel N. Nikolaev, R. Bruce Weisman

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

A new method was used to measure the fraction of semiconducting nanotubes in various as-grown or processed single-walled carbon nanotube (SWCNT) samples. SWCNT number densities were compared in images from near-IR photoluminescence (semiconducting species) and AFM (all species) to compute the semiconducting fraction. The results show large variations among growth methods and effective sorting by density gradient ultracentrifugation. This counting-based method provides important information about SWCNT sample compositions that can guide controlled growth methods and help calibrate bulk characterization techniques.

Original languageEnglish
Pages (from-to)3203-3208
Number of pages6
JournalNano letters
Volume9
Issue number9
DOIs
Publication statusPublished - Sep 9 2009

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Naumov, A. V., Kuznetsov, O. A., Harutyunyan, A. R., Green, A. A., Hersam, M. C., Resasco, D. E., Nikolaev, P. N., & Weisman, R. B. (2009). Quantifying the semiconducting fraction in single-walled carbon nanotube samples through comparative atomic force and photoluminescence microscopies. Nano letters, 9(9), 3203-3208. https://doi.org/10.1021/nl9014342