Quantitative analysis of strain relaxation in GexSi 1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-x alloys

R. Hull; J. C. Bean; L. J. Peticolas; D. Bahnck; B. E. Weir; L. C. Feldman

doi:10.1063/1.108068

Quantitative analysis of strain relaxation in Ge_xSi _1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge_xSi_1-x alloys

R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck, B. E. Weir, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

We report a quantitative theoretical and experimental analysis of strain relaxation in Ge_xSi_1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h<h_x, but greater on the 60°a/2〈110〉 dislocations for h≳h_x. The sensitive calculated dependence of h_x upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m^-2 for x∼0.3 in Ge _xSi_1-x.

Original language	English
Pages (from-to)	2802-2804
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	23
DOIs	https://doi.org/10.1063/1.108068
Publication status	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Quantitative analysis of strain relaxation in Ge_xSi _1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge_xSi_1-x alloys. / Hull, R.; Bean, J. C.; Peticolas, L. J.; Bahnck, D.; Weir, B. E.; Feldman, L. C.

In: Applied Physics Letters, Vol. 61, No. 23, 1992, p. 2802-2804.

Research output: Contribution to journal › Article › peer-review

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title = "Quantitative analysis of strain relaxation in GexSi 1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-x alloys",

abstract = "We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, hx, but greater on the 60°a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m-2 for x∼0.3 in Ge xSi1-x.",

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AU - Hull, R.

AU - Bean, J. C.

AU - Peticolas, L. J.

AU - Bahnck, D.

AU - Weir, B. E.

AU - Feldman, L. C.

PY - 1992

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N2 - We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, hx, but greater on the 60°a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m-2 for x∼0.3 in Ge xSi1-x.

AB - We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, hx, but greater on the 60°a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m-2 for x∼0.3 in Ge xSi1-x.

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Quantitative analysis of strain relaxation in Ge_xSi _1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge_xSi_1-x alloys

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