Abstract
We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h<hx, but greater on the 60°a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m-2 for x∼0.3 in Ge xSi1-x.
| Original language | English |
|---|---|
| Pages (from-to) | 2802-2804 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Dec 1 1992 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Quantitative analysis of strain relaxation in Ge<sub>x</sub>Si <sub>1-x</sub>/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge<sub>x</sub>Si<sub>1-x</sub> alloys'. Together they form a unique fingerprint.
Cite this
Hull, R., Bean, J. C., Peticolas, L. J., Bahnck, D., Weir, B. E., & Feldman, L. C. (1992). Quantitative analysis of strain relaxation in GexSi 1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-x alloys. Applied Physics Letters, 61(23), 2802-2804. https://doi.org/10.1063/1.108068