Quantitative analysis of strain relaxation in GexSi 1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1-x alloys

R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck, B. E. Weir, L. C. Feldman

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Abstract

We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60°a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h<hx, but greater on the 60°a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m-2 for x∼0.3 in Ge xSi1-x.

Original languageEnglish
Pages (from-to)2802-2804
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number23
DOIs
Publication statusPublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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