A quantitative analysis of the theoretical value for the open-circuit photovoltage, V//o//c, of a semiconductor/liquid junction reveals that control of bulk carrier transport properties is crucial to interpreting the observables at the semiconductor/liquid interface. Use of characterized semiconductor samples yields quantitative agreement between the maximum theoretical V//o//c and experimentally observed values for both n-Si and p-Si surfaces in nonaqueous solvents. This accord between theory and experiment rules out deleterious effects of charged surface states on the V//o//c of these interfaces. Lower than ideal V//o//c values in other systems might reflect poor diffusion lengths in the semiconductor, classical tunneling over the barrier, or the effects of surface states.
|Number of pages||8|
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - Nov 1984|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces