QUANTITATIVE INVESTIGATION OF THE OPEN-CIRCUIT PHOTOVOLTAGE AT THE SEMICONDUCTOR/LIQUID INTERFACE.

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Abstract

A quantitative analysis of the theoretical value for the open-circuit photovoltage, V//o//c, of a semiconductor/liquid junction reveals that control of bulk carrier transport properties is crucial to interpreting the observables at the semiconductor/liquid interface. Use of characterized semiconductor samples yields quantitative agreement between the maximum theoretical V//o//c and experimentally observed values for both n-Si and p-Si surfaces in nonaqueous solvents. This accord between theory and experiment rules out deleterious effects of charged surface states on the V//o//c of these interfaces. Lower than ideal V//o//c values in other systems might reflect poor diffusion lengths in the semiconductor, classical tunneling over the barrier, or the effects of surface states.

Original languageEnglish
Pages (from-to)2496-2503
Number of pages8
JournalJournal of the Electrochemical Society
Volume131
Issue number11
Publication statusPublished - Nov 1984

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photovoltages
Semiconductor materials
Networks (circuits)
Liquids
Surface states
liquids
Carrier transport
diffusion length
Transport properties
quantitative analysis
transport properties
Chemical analysis
Experiments

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

QUANTITATIVE INVESTIGATION OF THE OPEN-CIRCUIT PHOTOVOLTAGE AT THE SEMICONDUCTOR/LIQUID INTERFACE. / Lewis, Nathan S.

In: Journal of the Electrochemical Society, Vol. 131, No. 11, 11.1984, p. 2496-2503.

Research output: Contribution to journalArticle

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