Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics

Ruth A. Schlitz, Young Geun Ha, Tobin J Marks, Lincoln J. Lauhon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Uniformity of the dielectric breakdown voltage distribution for several thicknesses of a zirconia-based self-assembled nanodielectric was characterized using the Weibull distribution. Two regimes of breakdown behavior are observed: self-assembled multilayers >5 nm thick are well described by a single two-parameter Weibull distribution, with β ≈ 11. Multilayers ≤5 nmthick exhibit kinks on the Weibull plot of dielectric breakdown voltage, suggesting that multiple characteristic mechanisms for dielectric breakdown are present. Both the degree of uniformity and the effective dielectric breakdown field are observed to be greater for one layer than for two layers of Zr-SAND, suggesting that this multilayer is more promising for device applications.

Original languageEnglish
Pages (from-to)4452-4460
Number of pages9
JournalACS Nano
Volume6
Issue number5
DOIs
Publication statusPublished - May 22 2012

Fingerprint

Electric breakdown
zirconium oxides
Zirconia
statistical analysis
Statistical methods
breakdown
electrical faults
Multilayers
Weibull distribution
plots
zirconium oxide

Keywords

  • Dielectric breakdown
  • Reliability
  • SAND
  • Self-assembly
  • Weibull analysis

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics. / Schlitz, Ruth A.; Ha, Young Geun; Marks, Tobin J; Lauhon, Lincoln J.

In: ACS Nano, Vol. 6, No. 5, 22.05.2012, p. 4452-4460.

Research output: Contribution to journalArticle

Schlitz, Ruth A. ; Ha, Young Geun ; Marks, Tobin J ; Lauhon, Lincoln J. / Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics. In: ACS Nano. 2012 ; Vol. 6, No. 5. pp. 4452-4460.
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