Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.
|Number of pages||3|
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - Jan 1983|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces