QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXY.

J. H. McFee, R. G. Swartz, V. D. Archer, S. N. Finegan, Leonard C Feldman

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Abstract

Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.

Original languageEnglish
Pages (from-to)214-216
Number of pages3
JournalJournal of the Electrochemical Society
Volume130
Issue number1
Publication statusPublished - Jan 1983

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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