QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXY.

J. H. McFee, R. G. Swartz, V. D. Archer, S. N. Finegan, Leonard C Feldman

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.

Original languageEnglish
Pages (from-to)214-216
Number of pages3
JournalJournal of the Electrochemical Society
Volume130
Issue number1
Publication statusPublished - Jan 1983

Fingerprint

Silicon
Molecular beam epitaxy
molecular beam epitaxy
Carbon
Epitaxial layers
carbon
silicon
Secondary ion mass spectrometry
Dislocations (crystals)
secondary ion mass spectrometry
Oxygen
Substrates
Epitaxial growth
oxygen
Monolayers
epitaxy
Defects
defects

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXY. / McFee, J. H.; Swartz, R. G.; Archer, V. D.; Finegan, S. N.; Feldman, Leonard C.

In: Journal of the Electrochemical Society, Vol. 130, No. 1, 01.1983, p. 214-216.

Research output: Contribution to journalArticle

@article{10224dadb2004e288e98ac9779fc4e24,
title = "QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXY.",
abstract = "Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.",
author = "McFee, {J. H.} and Swartz, {R. G.} and Archer, {V. D.} and Finegan, {S. N.} and Feldman, {Leonard C}",
year = "1983",
month = "1",
language = "English",
volume = "130",
pages = "214--216",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

TY - JOUR

T1 - QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXY.

AU - McFee, J. H.

AU - Swartz, R. G.

AU - Archer, V. D.

AU - Finegan, S. N.

AU - Feldman, Leonard C

PY - 1983/1

Y1 - 1983/1

N2 - Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.

AB - Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration approximately equals 10**2**1 cm** minus **3 exhibit line dislocation densities greater than equivalent to 10**7 cm** minus **2, while layers with interfacial carbon concentration less than equivalent to 10**1**9 cm** minus **3 ( less than equivalent to 0. 01 monolayer carbon) have line dislocation densities less than equivalent to 10**4 cm** minus **2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.

UR - http://www.scopus.com/inward/record.url?scp=0020498662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020498662&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020498662

VL - 130

SP - 214

EP - 216

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -