Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts

Kuan Eng Johnson Goh, Chit Siong Lau, Jing Yee Chee, Yee Sin Ang, Shi Wun Tong, Liemao Cao, Zi En Ooi, Tong Wang, Lay Kee Ang, Yan Wang, Manish Chhowalla

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts.

Original languageEnglish
Pages (from-to)13700-13708
Number of pages9
JournalACS nano
Volume14
Issue number10
DOIs
Publication statusPublished - Oct 27 2020

Keywords

  • 2D materials
  • Contacts
  • Quantum transport
  • Transition metal dichalcogenides
  • WS2

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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