Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts

Kuan Eng Johnson Goh; Chit Siong Lau; Jing Yee Chee; Yee Sin Ang; Shi Wun Tong; Liemao Cao; Zi En Ooi; Tong Wang; Lay Kee Ang; Yan Wang; Manish Chhowalla

doi:10.1021/acsnano.0c05915

Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts

Kuan Eng Johnson Goh, Chit Siong Lau, Jing Yee Chee, Yee Sin Ang, Shi Wun Tong, Liemao Cao, Zi En Ooi, Tong Wang, Lay Kee Ang, Yan Wang, Manish Chhowalla

Rutgers University

Research output: Contribution to journal › Article › peer-review

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts.

Original language	English
Pages (from-to)	13700-13708
Number of pages	9
Journal	ACS nano
Volume	14
Issue number	10
DOIs	https://doi.org/10.1021/acsnano.0c05915
Publication status	Published - Oct 27 2020

Keywords

2D materials
Contacts
Quantum transport
Transition metal dichalcogenides
WS2

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts. / Goh, Kuan Eng Johnson; Lau, Chit Siong; Chee, Jing Yee; Ang, Yee Sin; Tong, Shi Wun; Cao, Liemao; Ooi, Zi En; Wang, Tong; Ang, Lay Kee; Wang, Yan; Chhowalla, Manish.

In: ACS nano, Vol. 14, No. 10, 27.10.2020, p. 13700-13708.

Research output: Contribution to journal › Article › peer-review

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title = "Quantum transport in two-dimensional WS2 with high-efficiency carrier injection through indium alloy contacts",

abstract = "Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts. ",

keywords = "2D materials, Contacts, Quantum transport, Transition metal dichalcogenides, WS2",

author = "Goh, {Kuan Eng Johnson} and Lau, {Chit Siong} and Chee, {Jing Yee} and Ang, {Yee Sin} and Tong, {Shi Wun} and Liemao Cao and Ooi, {Zi En} and Tong Wang and Ang, {Lay Kee} and Yan Wang and Manish Chhowalla",

note = "Funding Information: This research was supported by the Agency for Science, Technology and Research (A*STAR) under its A*STAR QTE Grant No. A1685b0005 and CDA Grant No. A1820g0086. Y.S.A., L.C., and L.K.A. acknowledge the supports of Singapore MOE Tier 2 Grant (2018-T2-1-007) and USA ONRG grant (N62909-19-1-2047). All the calculations were carried out using the computational resources provided by the National Supercomputing Centre (NSCC) Singapore. The authors thank C.H.K. Goh for assistance with indium evaporation in device fabrication.",

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AU - Goh, Kuan Eng Johnson

AU - Lau, Chit Siong

AU - Chee, Jing Yee

AU - Ang, Yee Sin

AU - Tong, Shi Wun

AU - Cao, Liemao

AU - Ooi, Zi En

AU - Wang, Tong

AU - Ang, Lay Kee

AU - Wang, Yan

AU - Chhowalla, Manish

N1 - Funding Information: This research was supported by the Agency for Science, Technology and Research (A*STAR) under its A*STAR QTE Grant No. A1685b0005 and CDA Grant No. A1820g0086. Y.S.A., L.C., and L.K.A. acknowledge the supports of Singapore MOE Tier 2 Grant (2018-T2-1-007) and USA ONRG grant (N62909-19-1-2047). All the calculations were carried out using the computational resources provided by the National Supercomputing Centre (NSCC) Singapore. The authors thank C.H.K. Goh for assistance with indium evaporation in device fabrication.

PY - 2020/10/27

Y1 - 2020/10/27

N2 - Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts.

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