Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements

Alexander U. Adler, Ted C. Yeh, D. Bruce Buchholz, Robert P. H. Chang, Thomas O Mason

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Quasi-reversible oxygen exchange/point defect relaxation in an amorphous In-Ga-Zn-O thin film was monitored by in situ electrical property measurements (conductivity, Seebeck coefficient) at 200 °C subjected to abrupt changes in oxygen partial pressure (p O 2). By subtracting the long-term background decay from the conductivity curves, time-independent conductivity values were obtained at each p O 2. From these values, a log-log Brouwer plot of conductivity vs. p O 2 of approximately -1/2 was obtained, which may indicate co-elimination (filling) of neutral and charged oxygen vacancies. This work demonstrates that Brouwer analysis can be applied to the study of defect structure in amorphous oxide thin films.

Original languageEnglish
Article number122103
JournalApplied Physics Letters
Volume102
Issue number12
DOIs
Publication statusPublished - Mar 25 2013

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point defects
electrical measurement
conductivity
thin films
oxygen
Seebeck effect
partial pressure
elimination
plots
electrical properties
oxides
defects
decay
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements. / Adler, Alexander U.; Yeh, Ted C.; Bruce Buchholz, D.; Chang, Robert P. H.; Mason, Thomas O.

In: Applied Physics Letters, Vol. 102, No. 12, 122103, 25.03.2013.

Research output: Contribution to journalArticle

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