Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes

Julian J. McMorrow, Cory D. Cress, William A. Gaviria Rojas, Michael L. Geier, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Original languageEnglish
Pages (from-to)2992-3000
Number of pages9
JournalACS Nano
Volume11
Issue number3
DOIs
Publication statusPublished - Mar 28 2017

Fingerprint

Single-walled carbon nanotubes (SWCN)
integrated circuits
Integrated circuits
CMOS
Metals
carbon nanotubes
Radiation
rails
radiation
Encapsulation
dosage
Rails
radiation hardening
Doping (additives)
Radiation hardening
inverters
logic circuits
Logic circuits
Space applications
organic materials

Keywords

  • CMOS
  • hardening
  • inverter
  • radiation
  • SWCNT
  • total ionizing dose

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes. / McMorrow, Julian J.; Cress, Cory D.; Gaviria Rojas, William A.; Geier, Michael L.; Marks, Tobin J; Hersam, Mark C.

In: ACS Nano, Vol. 11, No. 3, 28.03.2017, p. 2992-3000.

Research output: Contribution to journalArticle

McMorrow, Julian J. ; Cress, Cory D. ; Gaviria Rojas, William A. ; Geier, Michael L. ; Marks, Tobin J ; Hersam, Mark C. / Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes. In: ACS Nano. 2017 ; Vol. 11, No. 3. pp. 2992-3000.
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